Semiconductor device, electronic device, and method of manufacturing semiconductor device

• US 8,487,436 B2
• Filed: 05/12/2009
• Issued: 07/16/2013
• Est. Priority Date: 01/28/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Isa, Toshiyuki, Morisue, Masafumi, Kawamata, Ikuko
• Primary Examiner(s): Tran, Thien F
• Application Number:
  US12/464,252
• Publication Number:
  US 20090224237A1
• Time in Patent Office: 1,526 Days
• Field of Search: 257/741, 257/746
• US Class Current: 257/741
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10K 71/611 using printing deposition, e.g. ink jet printing

Abstract

To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.

Claims

1. A semiconductor device comprising:

a substrate;

a layer formed over the substrate; and

a wiring on the layer,

wherein the wiring comprises a metal material and an organic material,

wherein the layer contains a material selected from the group consisting of a substance containing a fluorocarbon group and a substance containing a silane coupling agent, and

wherein the wiring has a wave shape on side ends thereof.

2. A semiconductor device according to claim 1, wherein the wiring is a gate electrode layer of a transistor.

3. A semiconductor device according to claim 2, further comprising a semiconductor layer and a gate insulating layer.

4. A semiconductor device according to claim 1, wherein the wiring is a source electrode layer of a transistor.

5. A semiconductor device according to claim 4, further comprising a semiconductor layer and a gate insulating layer.

6. A semiconductor device according to claim 1, wherein the wiring is a drain electrode layer of a transistor.

7. A semiconductor device according to claim 6, further comprising a semiconductor layer and a gate insulating layer.

8. A semiconductor device according to claim 1, wherein the semiconductor device is one selected from the group consisting of a display device, a video camera, a digital camera, a computer and a portable information terminal.

9. A semiconductor device according to claim 1, wherein at least one of a gate electrode layer and source and drain electrode layers is formed by a process comprising:

discharging a liquid composition comprising a metal material; and

baking the liquid composition.

10. A semiconductor device comprising:

a substrate;

a layer formed over the substrate; and

a wiring on the layer,

wherein the wiring comprises a metal material and an organic material,

wherein the layer contains a material selected from the group consisting of a substance containing a fluorocarbon group and a substance containing a silane coupling agent, and

wherein the wiring has a meander shape.

11. A semiconductor device according to claim 10, wherein the wiring is a gate electrode layer of a transistor.

12. A semiconductor device according to claim 11, further comprising a semiconductor layer and a gate insulating layer.

13. A semiconductor device according to claim 10, wherein the wiring is a source electrode layer of a transistor.

14. A semiconductor device according to claim 13, further comprising a semiconductor layer and a gate insulating layer.

15. A semiconductor device according to claim 10, wherein the wiring is a drain electrode layer of a transistor.

16. A semiconductor device according to claim 15, further comprising a semiconductor layer and a gate insulating layer.

17. A semiconductor device according to claim 10, wherein the semiconductor device is one selected from the group consisting of a display device, a video camera, a digital camera, a computer and a portable information terminal.

18. A semiconductor device according to claim 10, wherein at least one of a gate electrode layer and source and drain electrode layers is formed by a process comprising:

discharging a liquid composition comprising a metal material; and

baking the liquid composition.

19. A semiconductor device comprising:

a substrate;

a layer formed over the substrate;

a gate electrode layer on the layer;

a gate insulating layer over the gate electrode layer;

a semiconductor layer over the gate insulating layer; and

source and drain electrode layers over the semiconductor layer,

wherein the gate electrode layer comprises a metal material and an organic material,

wherein the layer contains a material selected from the group consisting of a substance containing a fluorocarbon group and a substance containing a silane coupling agent, and

wherein the gate electrode layer has a wave shape on side ends thereof.

20. A semiconductor device according to claim 19, wherein the semiconductor device is one selected from the group consisting of a display device, a video camera, a digital camera, a computer and a portable information terminal.

21. A semiconductor device according to claim 19, wherein the gate electrode layer is formed by a process comprising:

discharging a liquid composition comprising a metal material; and

baking the liquid composition.

22. A semiconductor device comprising:

a gate electrode layer;

a gate insulating layer over the gate electrode layer;

a semiconductor layer over the gate insulating layer;

a layer formed over the semiconductor layer; and

source and drain electrode layers on the layer,

wherein the source and drain electrode layers comprise a metal material and an organic material,

wherein the layer contains a material selected from the group consisting of a substance containing a fluorocarbon group and a substance containing a silane coupling agent, and

wherein the source and drain electrode layers have a wave shape on side ends thereof.

23. A semiconductor device according to claim 22, wherein the semiconductor device is one selected from the group consisting of a display device, a video camera, a digital camera, a computer and a portable information terminal.

24. A semiconductor device according to claim 22, further comprising a power line,

wherein the power line has a meander shape.

25. A semiconductor device according to claim 22, wherein the source and drain electrode layers are formed by a process comprising:

discharging a liquid composition comprising a metal material; and

baking the liquid composition.