Thick-film pastes containing lead- and tellurium-oxides, and their use in the manufacture of semiconductor devices

  • US 8,497,420 B2
  • Filed: 05/04/2011
  • Issued: 07/30/2013
  • Est. Priority Date: 05/04/2010
  • Status: Active Grant
First Claim
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1. A thick-film paste composition for use in forming an electrical connection in a photovoltaic device comprising a semiconductor substrate having at least one insulating layer on a main surface thereof, the composition comprising:

  • a) 85 to 99.5% by weight of an electrically conductive metal or derivative thereof, based on total solids in the composition;

    b) 0.5 to 15% by weight based on solids of a lead-tellurium-oxide, wherein the lead-tellurium-oxide comprises 30 to 65 mol % of lead oxide and 35 to 70 mol % of tellurium oxide; and

    c) an organic medium;

    wherein the thick-film paste, when fired, is capable of penetrating the at least one insulating layer.

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