Method of manufacturing a semiconductor device

• US 8,497,509 B2
• Filed: 07/16/2008
• Issued: 07/30/2013
• Est. Priority Date: 02/16/1995
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Arai, Yasuyuki, Teramoto, Satoshi
• Primary Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US12/173,929
• Publication Number:
  US 20080309585A1
• Time in Patent Office: 1,840 Days
• Field of Search: 257/72, 257/E27.009, 257/E29.293, 257/E29.295
• US Class Current: 257/72
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02675 using laser beams
• CPC Class Codes: H01L 2221/68318 Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: Y10S 438/928 Front and rear surface processing
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate

Abstract

A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of the amorphous silicon film; crystallizing the amorphous silicon film through a heat treatment to obtain a crystalline silicon film; forming a thin-film transistor using the crystalline silicon film; forming a sealing layer that seals the thin-film transistor; bonding a second substrate having a translucent property to the sealing layer; and removing the first insulating film to peel off the first substrate.

Claims

1. An active matrix flexible display device comprising:

a first flexible substrate comprising a resin;

a circuit including a thin film transistor and a pixel electrode electrically connected to the thin film transistor wherein the circuit is adhered to the first flexible substrate through an adhesive; and

a second flexible substrate comprising a resin opposed to the first flexible substrate with the circuit interposed therebetween.

2. The active matrix flexible display device according to claim 1 wherein the pixel electrode is located between the first flexible substrate and the thin film transistor.

3. The active matrix flexible display device according to claim 1 wherein the active matrix flexible display device is an EL display.

4. The active matrix flexible display device according to claim 1 wherein the first flexible substrate comprises PET.

5. The active matrix flexible display device according to claim 1 wherein the adhesive comprises an epoxy resin.

6. The active matrix flexible display device according to claim 1,

wherein at least a channel formation region of the thin film transistor contains hydrogen and halogen atoms at a density of 1×

10²⁰ atoms cm<sup>−

3</sup> or lower, and contains carbon and nitrogen atoms at a density of 5×

10¹⁸ atoms cm<sup>−

3</sup> or lower, and contains oxygen atoms at a density of 5×

10¹⁹ atoms cm<sup>−

3</sup> or lower.

7. An active matrix flexible display device comprising:

a first flexible substrate comprising a resin;

a circuit including a thin film transistor and a pixel electrode electrically connected to the thin film transistor wherein the circuit is adhered to the first flexible substrate through an adhesive;

a second flexible substrate comprising a resin opposed to the first flexible substrate with the circuit interposed therebetween; and

a liquid crystal interposed between the first flexible substrate and the second flexible substrate wherein the circuit is located between the first flexible substrate and the liquid crystal.

8. The active matrix flexible display device according to claim 7 wherein the pixel electrode is located between the first flexible substrate and the thin film transistor.

9. The active matrix flexible display device according to claim 7 wherein the active matrix flexible display device is an EL display.

10. The active matrix flexible display device according to claim 7 wherein the first flexible substrate comprises PET.

11. The active matrix flexible display device according to claim 7 wherein the adhesive comprises an epoxy resin.

12. The active matrix flexible display device according to claim 7 wherein the liquid crystal comprises a resin.

13. The active matrix flexible display device according to claim 7,

wherein at least a channel formation region of the thin film transistor contains hydrogen and halogen atoms at a density of 1×

10²⁰ atoms cm<sup>−

3</sup> or lower, and contains carbon and nitrogen atoms at a density of 5×

10¹⁸ atoms cm<sup>−

3</sup> or lower, and contains oxygen atoms at a density of 5×

10¹⁹ atoms cm<sup>−

3</sup> or lower.

14. An article comprising a curved surface and an active matrix flexible display device attached to the curved surface comprising, the active matrix flexible display device comprising:

a first flexible substrate comprising a resin;

a circuit including a thin film transistor and a pixel electrode electrically connected to the thin film transistor wherein the circuit is adhered to the first flexible substrate through an adhesive; and

a second flexible substrate comprising a resin opposed to the first flexible substrate with the circuit interposed therebetween.

15. The article according to claim 14 wherein the pixel electrode is located between the first flexible substrate and the thin film transistor.

16. The article according to claim 14 wherein the active matrix flexible display device is an EL display.

17. The article according to claim 14 wherein the first flexible substrate comprises PET.

18. The article according to claim 14 wherein the adhesive comprises an epoxy resin.

19. The article according to claim 14 wherein the article is a vehicle.

20. The article according to claim 14,

wherein at least a channel formation region of the thin film transistor contains hydrogen and halogen atoms at a density of 1×

10²⁰ atoms cm<sup>−

3</sup> or lower, and contains carbon and nitrogen atoms at a density of 5×

10¹⁸ atoms cm<sup>−

3</sup> or lower, and contains oxygen atoms at a density of 5×

10¹⁹ atoms cm<sup>−

3</sup> or lower.

21. An article comprising a curved surface and an active matrix flexible display device attached to the curved surface comprising, the active matrix flexible display device comprising:

a first flexible substrate comprising a resin;

a circuit including a thin film transistor and a pixel electrode electrically connected to the thin film transistor wherein the circuit is adhered to the first flexible substrate through an adhesive;

a second flexible substrate comprising a resin opposed to the first flexible substrate with the circuit interposed therebetween; and

a liquid crystal interposed between the first flexible substrate and the second flexible substrate wherein the circuit is located between the first flexible substrate and the liquid crystal.

22. The article according to claim 21 wherein the pixel electrode is located between the first flexible substrate and the thin film transistor.

23. The article according to claim 21 wherein the active matrix flexible display device is an EL display.

24. The article according to claim 21 wherein the first flexible substrate comprises PET.

25. The article according to claim 21 wherein the adhesive comprises an epoxy resin.

26. The article according to claim 21 wherein the liquid crystal comprises a resin.

27. The article according to claim 21 wherein the article is a vehicle.

28. The article according to claim 21,

wherein at least a channel formation region of the thin film transistor contains hydrogen and halogen atoms at a density of 1×

10²⁰ atoms cm<sup>−

3</sup> or lower, and contains carbon and nitrogen atoms at a density of 5×

10¹⁸ atoms cm<sup>−

3</sup> or lower, and contains oxygen atoms at a density of 5×

10¹⁹ atoms cm<sup>−

3</sup> or lower.