Variable frequency drive system apparatus and method for reduced ground leakage current and transistor protection

• US 8,503,180 B2
• Filed: 12/30/2005
• Issued: 08/06/2013
• Est. Priority Date: 12/30/2005
• Status: Expired due to Fees

• Current Assignee: SMC Electricial Products Incorporated (Accton Technology Corporation)
• Original Assignee: SMC Electricial Products Incorporated (Accton Technology Corporation)
• Inventors: Nojima, Geraldo
• Primary Examiner(s): Nguyen, Danny
• Application Number:
  US12/159,544
• Publication Number:
  US 20080303469A1
• Time in Patent Office: 2,776 Days
• Field of Search: 361/43, 361/44, 361/47, 361/719, 361/753, 361/799, 361/762, 361/767, 361/23, 361/707, 324/551, 324/509, 324/545
• US Class Current: 361/707
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H02M 7/003 Constructional details, e.g. physical layout, assembly, wiring or busbar connections
• CPC Class Codes: H02P 27/06 using dc to ac converters or inverters H02P27/05 takes precedence

Abstract

As applications of variable frequency drives (VFD) (50) continue to grow so do challenges to provide VFD (50) systems meeting application specific requirements. For multiple reasons to include safety standards and electromagnetic interference, reduced ground leakage current is desirable. Building high output voltage VFDs (50) using transistors rated at voltages lower than the VFD output voltage is desireable for economic reasons. The apparatus and method described herein meet these challenges and others, in part by placing an electrically insulating plate (cp176) having high thermal conductivity, a low dielectric constant, and high dielectric strength between the heat sink plate of a VFD power semiconductor module and a grounded cooling plate (80 TE). The positive effects of this plate installation include reducing ground leakage current induced by system capacitances to ground upon high frequency voltage steps and increasing the effective dielectric strength of the VFD'"'"'s (50) transistor modules engaging in high reliable VFD (50) voltage output for a given transistor rating.

Claims

1. A method of increasing dielectric strength of a power semiconductor in a variable frequency drive (VFD) system comprising:

disposing an electrically insulating plate which has high thermal conductivity, a low dielectric constant, and high dielectric strength, an insulator and a heat sink between a VFD power semiconductor module and a cooling plate;

wherein an output voltage of said VFD is greater than or equal to 690 V.

8. The method according to claim 1, wherein said output voltage of said VFD is greater than or equal to 4160 V.

2. A variable frequency drive (VFD) system comprising:

an inverter bridge, of a VFD power semiconductor module, electrically connected to the DC bus;

an electrically insulating plate which has high thermal conductivity, a low dielectric constant, and high dielectric strength; and

a cooling plate

wherein the VFD power semiconductor module is mounted on an insulator, a heat sink and on the electrically insulating plate, having high thermal conductivity, a low dielectric constant, and high dielectric strenght;

wherein the insulating plate is mounted on the cooling plate;

wherein the cooling plate is grounded and

wherein an output voltage of said VFD is greater than or equal to 690 V.

3. The VFD system according to claim 2, wherein the insulating plate is a ceramic material.

4. The VFD system according to claim 2, wherein the insulating plate is made of boron nitride.

5. The VFD system according to claim 2,

wherein a capacitance is formed across the electrically insulating plate between the VFD power semiconductor module and the cooling plate, and

wherein said capacitance between the VFD power semoconductor module and the cooling plate is less than inverter bridge transistor internal capacitance to ground, and a total capacitance to ground of the VFD system is reduced.

6. The VFD system according to claim 2, further comprising at least one mounting device which enables electrical insulation and thermal conduction between the VFD power semiconductor module and the grounded cooling plate and secures the VFD power semiconductor to the insulating plate and secures the insulating plate to the grounded cooling plate.

9. The VFD system according to claim 2, wherein said output voltage of said VFD is greater than or equal to 4160 V.

7. A variable frequency drive (VFD) system comprising:

a DC bus which has a grounded neutral point; and

VFD power semiconductor modules, wherein

transistor modules of an inverter bridge are connected in series, the inverter bridges is electrically connected to the DC bus, and an insulation of transistor modules is rated at less than half of a full maximum DC bus voltage rating;

an electrically insulating plate which has high thermal conductivity, a low dielectric constant, and high dielectric strength; and

a grounded cooling plate, wherein the VFD power semiconductor module is mounted on an insulator, a heat sink and on the electrically insulating plate, having high thermal conductivity, a low dielectric constant, and high dielectric strength;

wherein the insulating plate is mounted on the grounded cooling plate;

wherein an effective insulation capability to ground of the VFD system is increased, and

wherein an output voltage of said VFD is greater than or equal to 690 V.