Method of making wafer structure for backside illuminated color image sensor

  • US 8,525,286 B2
  • Filed: 08/06/2009
  • Issued: 09/03/2013
  • Est. Priority Date: 05/09/2006
  • Status: Active Grant
First Claim
Patent Images

1. A backside illuminated sensor, comprising:

  • a semiconductor substrate having a substantially planar front surface and a back surface;

    a plurality of pixels formed on the substantially planar front surface of the semiconductor substrate; and

    wherein the semiconductor substrate comprises a plurality of thicknesses between the substantially planar front surface and the back surface, wherein at least one pixel from the plurality of pixels is aligned with at least one thickness from the plurality of thicknesses, andwherein the plurality of pixels comprises a first pixel and a second pixel and the plurality of thicknesses comprises a first thickness aligned with the first pixel and a second thickness aligned with the second pixel.

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