Semiconductor chip assembly with post/base heat spreader and multilevel conductive trace

• US 8,531,024 B2
• Filed: 04/21/2011
• Issued: 09/10/2013
• Est. Priority Date: 03/25/2008
• Status: Expired due to Fees

• Current Assignee: Bridge Semiconductor Corporation
• Original Assignee: Bridge Semiconductor Corporation
• Inventors: Lin, Charles W. C., Wang, Chia-Chung
• Primary Examiner(s): Wagner, Jenny L
• Assistant Examiner(s): BOYLE, ABBIGALE A
• Application Number:
  US13/091,162
• Publication Number:
  US 20110198662A1
• Time in Patent Office: 873 Days
• Field of Search: 257703-709, 257/711, 257/717, 257/720, 257/E23.102, 257/E23.104, 438/26, 438/27, 438/118, 438/122
• US Class Current: 257/706
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29339 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/32188 the layer connector connecting to a bonding area protruding from the surface of the item
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48235 connecting the wire to a via metallisation of the item
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83855 Hardening the adhesive by curing, i.e. thermosetting
• CPC Class Codes: H01L 2224/85207 Thermosonic bonding
• CPC Class Codes: H01L 23/3677 Wire-like or pin-like cooling fins or heat sinks
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01007 : Nitrogen [N]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01026 : Iron [Fe]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01087 : Francium [Fr]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/0134 : Quaternary Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/15174 : in different layers of the multilayer substrate
• CPC Class Codes: H01L 2924/16195 : Flat cap [not enclosing an internal cavity]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H01L 33/483 : Containers
• CPC Class Codes: H01L 33/642 : characterized by the shape
• CPC Class Codes: H05K 1/0204 : using means for thermal conduction connection in the thickness direction of the substrate H05K1/0207 takes precedence
• CPC Class Codes: H05K 1/115 : Via connections; Lands around holes or via connections H05K1/112 takes precedence
• CPC Class Codes: H05K 2201/09054 : Raised area or protrusion of metal substrate
• CPC Class Codes: H05K 2201/09509 : Blind vias, i.e. vias having one side closed
• CPC Class Codes: H05K 2201/10106 : Light emitting diode [LED]
• CPC Class Codes: H05K 2203/0369 : Etching selective parts of a metal substrate through part of its thickness, e.g. using etch resist
• CPC Class Codes: H05K 3/0061 : onto a metallic substrate, e.g. a heat sink heat sinks for electric apparatus H05K7/20
• CPC Class Codes: H05K 3/06 : the conductive material being removed chemically or electrolytically, e.g. by photo-etch process semi-additive methods H05K3/108

Abstract

A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace, a substrate and an adhesive. The heat spreader includes a post and a base. The conductive trace includes a pad, a terminal, a conductive pattern and first and second vias. The substrate includes the conductive pattern and a dielectric layer. The semiconductor device is electrically connected to the conductive trace and thermally connected to the heat spreader. The post extends upwardly from the base into an opening in the adhesive and an aperture in the substrate, and the base extends laterally from the post. The conductive trace provides signal routing between the pad and the terminal using the conductive pattern and the vias.

Claims

1. A semiconductor chip assembly, comprising:

a semiconductor device;

an adhesive that includes an opening;

a heat spreader that includes a post and a base, wherein the post is adjacent to and integral with the base and extends above the base in an upward direction, and the base extends below the post in a downward direction opposite the upward direction, covers the post in the downward direction and extends laterally from the post in lateral directions orthogonal to the upward and downward directions;

a substrate that includes a first conductive segment, a second conductive segment and a dielectric layer, wherein the first conductive segment is attached to and extends above the dielectric layer, the second conductive segment is attached to and extends below the dielectric layer, the dielectric layer contacts and is sandwiched between the conductive segments and an aperture extends through the substrate; and

a conductive trace that includes a pad, a terminal, a conductive pattern, a first via and a second via, wherein the conductive pattern is a part of the substrate and includes the first and/or second conductive segment, the first via extends through the adhesive and extends to the conductive pattern, the second via extends through the adhesive and extends to the conductive pattern and an electrically conductive path between the pad and the terminal includes the conductive pattern and the vias, an electrically conductive path between the pad and the conductive pattern includes the first via and an electrically conductive path between the terminal and the conductive pattern includes the second via;

wherein the semiconductor device overlaps the post, is electrically connected to the pad and thereby electrically connected to the terminal, and is thermally connected to the post and thereby thermally connected to the base;

wherein the adhesive is mounted on and extends above the base, extends above and below the substrate, extends laterally from the post to or beyond the terminal and is sandwiched between the post and the substrate, between the base and the substrate, between the pad and the substrate and between the terminal and the substrate;

wherein the substrate is mounted on the adhesive and extends above the base;

wherein the post extends into the opening, extends through the aperture and extends above and below the substrate; and

wherein the base extends below the semiconductor device and the substrate.

2. The assembly of claim 1, wherein the semiconductor device is an LED chip.

3. The assembly of claim 1, wherein the semiconductor device is an LED package.

4. The assembly of claim 1, wherein the semiconductor device is electrically connected to the pad using a wire bond and is thermally connected to the post using a die attach.

5. The assembly of claim 1, wherein the semiconductor device is electrically connected to the pad using a first solder joint and is thermally connected to the post using a second solder joint.

6. The assembly of claim 1, wherein the adhesive contacts the post, the base, the pad, the terminal, the dielectric layer, the conductive pattern and the vias.

7. The assembly of claim 1, wherein the adhesive covers and surrounds the post in the lateral directions.

8. The assembly of claim 1, wherein the adhesive is coplanar with the post above the substrate.

9. The assembly of claim 1, wherein the adhesive is coplanar with post below the substrate.

10. The assembly of claim 1, wherein the adhesive extends to peripheral edges of the assembly.

11. The assembly of claim 1, wherein the post has a diameter that decreases as it extends upwardly from the base to its top integral with the base.

12. The assembly of claim 1, wherein the base covers the semiconductor device and the pad in the downward direction.

13. The assembly of claim 1, wherein the pad and the first via are located above the conductive pattern and the terminal and the second via are located below the conductive pattern.

14. The assembly of claim 1, wherein the conductive pattern is a power/ground plane.

15. The assembly of claim 1, wherein the conductive pattern is the first conductive segment, the first via extends through the adhesive to the first conductive segment and the second via extends through the adhesive and the dielectric layer to the first conductive segment.

16. The assembly of claim 1, wherein the conductive pattern is the second conductive segment, the first via extends through the adhesive and the dielectric layer to the second conductive segment and the second via extends through the adhesive to the second conductive segment.

17. The assembly of claim 1, wherein the conductive pattern includes the conductive segments and an electrical interconnect that extends through the dielectric layer and electrically connects the conductive segments, the first via extends through the adhesive to the first conductive segment and the second via extends through the adhesive to the second conductive segment.

18. The assembly of claim 1, wherein the base and the terminal are the same metals and have the same thickness and are coplanar with one another.

19. The assembly of claim 1, wherein the heat spreader includes a cap that extends above and is adjacent to and covers in the upward direction and extends laterally from a top of the post and that contacts and overlaps the adhesive.

20. The assembly of claim 19, wherein the base, the cap, the pad and the terminal are primarily copper and the heat spreader includes a buried copper core shared by the post, the base and the cap.

21. A semiconductor chip assembly, comprising:

a semiconductor device;

an adhesive that includes an opening;

a heat spreader that includes a post and a base, wherein the post is adjacent to and integral with the base and extends above the base in an upward direction, and the base extends below the post in a downward direction opposite the upward direction, covers the post in the downward direction and extends laterally from the post in lateral directions orthogonal to the upward and downward directions;

a substrate that includes a first conductive segment, a second conductive segment and a dielectric layer, wherein the first conductive segment is attached to and extends above the dielectric layer, the second conductive segment is attached to and extends below the dielectric layer, the dielectric layer contacts and is sandwiched between the conductive segments and an aperture extends through the substrate; and

a conductive trace that includes a pad, a terminal, a conductive pattern, a first via and a second via, wherein the pad is located above the substrate, the terminal is located below the substrate, the conductive pattern is a part of the substrate and includes the first and/or second conductive segment, the first via is located above the conductive pattern and extends through the adhesive and extends to the conductive pattern, the second via is located below the conductive pattern and extends through the adhesive and extends to the conductive pattern and an electrically conductive path between the pad and the terminal includes the conductive pattern and the vias, an electrically conductive path between the pad and the conductive pattern includes the first via and an electrically conductive path between the terminal and the conductive pattern includes the second via;

wherein the semiconductor device overlaps the post, is electrically connected to the pad and thereby electrically connected to the terminal, and is thermally connected to the post and thereby thermally connected to the base;

wherein the adhesive is mounted on and extends above the base, extends above and below the substrate, extends laterally from the post to or beyond the terminal and is sandwiched between the post and the substrate, between the base and the substrate, between the pad and the substrate and between the terminal and the substrate;

wherein the substrate is mounted on the adhesive and extends above the base;

wherein the post extends into the opening, extends through the aperture and extends above and below the substrate; and

wherein the base extends below the semiconductor device and the substrate.

22. The assembly of claim 21, wherein the semiconductor device is an LED chip.

23. The assembly of claim 21, wherein the semiconductor device is electrically connected to the pad using a wire bond and is thermally connected to the post using a die attach.

24. The assembly of claim 21, wherein the adhesive contacts the post, the base, the pad, the terminal, the conductive pattern, the vias and the dielectric layer, covers and surrounds the post in the lateral directions and extends to peripheral edges of the assembly.

25. The assembly of claim 21, wherein the post is coplanar with the adhesive above and below the substrate.

26. The assembly of claim 21, wherein the conductive pattern is a power/ground plane.

27. The assembly of claim 21, wherein the base and the terminal are the same metals and have the same thickness and are coplanar with one another.

28. The assembly of claim 21, wherein the conductive trace is spaced from the heat spreader, the post, the base, the pad and the terminal contact the adhesive and are spaced from the conductive pattern and the dielectric layer, and the conductive pattern and the vias contact the adhesive.

29. The assembly of claim 21, wherein the heat spreader includes a cap that extends above and is adjacent to and covers in the upward direction and extends laterally from a top of the post and that contacts and overlaps the adhesive, and the pad and the cap have the same thickness where closest to one another, have different thickness where the cap is adjacent to the post and are coplanar with one another at a surface that faces in the upward direction.

30. The assembly of claim 29, wherein the base, the cap, the pad and the terminal are the same metals and are primarily copper and the heat spreader includes a buried copper core shared by the post, the base and the cap.

31. A semiconductor chip assembly, comprising:

a semiconductor device;

an adhesive that includes an opening;

a heat spreader that includes a post, a base and a cap, wherein the post is adjacent to and integral with the base, extends above the base in an upward direction and thermally connects the base and the cap, the base extends below the post in a downward direction opposite the upward direction, covers the post in the downward direction and extends laterally from the post in lateral directions orthogonal to the upward and downward directions, and the cap extends above and is adjacent to and covers in the upward direction and extends laterally from a top of the post;

a substrate that includes a first conductive segment, a second conductive segment and a dielectric layer, wherein the first conductive segment is attached to and extends above the dielectric layer, the second conductive segment is attached to and extends below the dielectric layer, the dielectric layer contacts and is sandwiched between the conductive segments and an aperture extends through the substrate; and

a conductive trace that includes a pad, a terminal, a conductive pattern, a first via and a second via, wherein the pad is located above the substrate and extends above the adhesive, the terminal is located below the substrate and extends below the adhesive, the conductive pattern is a part of the substrate and includes the first and/or second conductive segment, the first via is located above the conductive pattern and extends through the adhesive and extends to the conductive pattern, the second via is located below the conductive pattern and extends through the adhesive and extends to the conductive pattern and an electrically conductive path between the pad and the terminal includes the conductive pattern and the vias, an electrically conductive path between the pad and the conductive pattern includes the first via and an electrically conductive path between the terminal and the conductive pattern includes the second via;

wherein the semiconductor device is mounted on the cap, overlaps the post, the base and the cap, is electrically connected to the pad and thereby electrically connected to the terminal, and is thermally connected to the cap and thereby thermally connected to the base;

wherein the adhesive is mounted on and extends above the base, extends above and below the substrate, contacts and is sandwiched between the post and the substrate, between the base and the substrate, between the pad and the substrate and between the terminal and the substrate, contacts the conductive pattern, the vias and the dielectric layer, extends laterally from the post to or beyond the terminal and extends to peripheral edges of the assembly;

wherein the substrate is mounted on the adhesive and extends above the base;

wherein the post extends into the opening, extends through the aperture and extends above and below the substrate;

wherein the base extends below the semiconductor device and the substrate;

wherein the cap contacts and overlaps the adhesive;

wherein the pad and the cap have the same thickness where closest to one another, have different thickness where the cap is adjacent to the post and are coplanar with one another at a surface that faces in the upward direction; and

wherein the base and the terminal have the same thickness and are coplanar with one another at a surface that faces in the downward direction.

32. The assembly of claim 31, wherein the semiconductor device is an LED chip, is mounted on the cap using a die attach, is electrically connected to the pad using a wire bond and is thermally connected to the cap using the die attach.

33. The assembly of claim 31, wherein the post has a diameter that decreases as it extends upwardly from the base to its top and is coplanar with the adhesive above the substrate at the cap and below the substrate at the base.

34. The assembly of claim 31, wherein the adhesive alone can intersect an imaginary horizontal line between the post and the dielectric layer, an imaginary horizontal line between the post and the conductive pattern, an imaginary horizontal line between the post and the first via, an imaginary horizontal line between the post and the second via, an imaginary vertical line between the base and the cap, an imaginary vertical line between the base and the dielectric layer, an imaginary vertical line between the pad and the dielectric layer and an imaginary vertical line between the terminal and the dielectric layer.

35. The assembly of claim 31, wherein the base, the cap, the pad and the terminal are the same metals, include a gold, silver or nickel surface layer and are primarily copper, the post and the conductive pattern are copper, the heat spreader includes a buried copper core shared by the post, the base and the cap and the conductive trace includes a buried copper core shared by the pad, the terminal, the conductive pattern and the vias.