Electronic device including a trench with a facet and a conductive structure therein and a process of forming the same
First Claim
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1. An electronic device comprising a transistor structure, comprising:
- a semiconductor layer overlying a substrate and having a primary surface that generally corresponds to a first plane;
a trench extending into the semiconductor layer having a tapered shape, wherein the tapered shape includes a facet that lies substantially along a second plane that intersects the first plane at an angle in a range of approximately 20°
to approximately 70°
;
a source region of the transistor structure; and
a drain region of the transistor structure,wherein;
portions of the source and drain regions are disposed adjacent to the primary surface; and
another portion of the drain region is disposed within the trench.
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Abstract
An electronic device can include a transistor structure including a semiconductor layer overlying a substrate and a trench extending into the semiconductor layer having a tapered shape. In an embodiment, the tapered shape includes a facet. The transistor structure can include a source region and a drain region wherein different portions of the drain regions are disposed adjacent to the primary surface and within the trench. In another embodiment, different facets may be spaced apart from each other. Processes of forming the tapered etch can be tailored based on the needs or desires of a fabricator.
33 Citations
17 Claims
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1. An electronic device comprising a transistor structure, comprising:
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a semiconductor layer overlying a substrate and having a primary surface that generally corresponds to a first plane; a trench extending into the semiconductor layer having a tapered shape, wherein the tapered shape includes a facet that lies substantially along a second plane that intersects the first plane at an angle in a range of approximately 20°
to approximately 70°
;a source region of the transistor structure; and a drain region of the transistor structure, wherein; portions of the source and drain regions are disposed adjacent to the primary surface; and another portion of the drain region is disposed within the trench. - View Dependent Claims (2, 3, 4)
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5. An electronic device comprising:
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a semiconductor layer overlying a substrate and having a primary surface; and a trench extending into the semiconductor layer and having a first facet and a second facet spaced apart from the second facet, wherein; the first facet is disposed closer to the primary surface as compared to the second facet; the first facet lies along a first plane, the second facet lies along a second plane, and the primary surface generally corresponds to a third plane; and each of the first and second planes intersects the third plane at an angle in a range of approximately 20°
to approximately 70°
. - View Dependent Claims (6, 7, 8, 9, 10)
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11. A process of forming an electronic device comprising:
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providing a semiconductor layer overlying a substrate and having a primary surface that generally corresponds to a first plane; patterning a semiconductor layer to define a trench; and forming a facet from a portion of the semiconductor layer, wherein the facet lies along a second plane that intersects the first plane at an angle in a range of approximately 20°
to approximately 70°
,wherein in a finished device; the facet is spaced apart from a bottom of the trench; and as compared to a bottom of the trench, a lowest elevation of the facet is disposed closer to the primary surface. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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Specification