Semiconductor device and method for manufacturing the same

• US 8,552,498 B2
• Filed: 09/16/2009
• Issued: 10/08/2013
• Est. Priority Date: 09/19/2008
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Eguchi, Shingo, Oikawa, Yoshiaki
• Primary Examiner(s): Parker, Kenneth
• Assistant Examiner(s): Diaz, Jose R
• Application Number:
  US12/560,965
• Publication Number:
  US 20100072548A1
• Time in Patent Office: 1,483 Days
• Field of Search: 257/701, 257/E23.089, 257/347, 257/350, 257/702, 257/787, 257/E27.016, 257/E21.599, 257/E29.273, 438/110, 438/463, 438/155, 438/151, 438/584
• US Class Current: 257/347
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785

Abstract

A semiconductor device in which defects in characteristics due to electrostatic discharge is reduced and a method for manufacturing the semiconductor device are provided. The semiconductor device has at least one of these structures: (1) a structure in which a first and second insulating films are in direct contact with each other in a peripheral region of a circuit portion, (2) a structure in which a first and second insulators are closely attached to each other, and (3) a structure in which a first conductive layer and a second conductive layer are provided on outer surfaces of the first insulator and the second insulator, respectively, and electrical conduction between the first and second conductive layers is achieved at a side surface of the peripheral region. Note that the conduction at the side surface can be achieved by cutting a plurality of semiconductor devices into separate semiconductor devices.

Claims

1. A semiconductor device comprising:

a first conductive layer;

a circuit portion including a thin film transistor over the first conductive layer;

a first insulating film over the circuit portion;

a second insulating film over the first insulating film;

an antenna over the circuit portion with the first insulating film and the second insulating film interposed therebetween, the antenna being electrically connected to the thin film transistor;

a third insulating film over the antenna; and

a second conductive layer over the third insulating film, the second conductive layer being conducted to the first conductive layer,

wherein the first insulating film and the third insulating film are directly in contact with each other in an outer side of the second insulating film, and

wherein each of the first conductive layer and the second conductive layer comprises one of titanium and a compound of silicon oxide and indium tin oxide.

2. The semiconductor device according to claim 1,

wherein the first insulating film and the third insulating film are each a silicon nitride film.

3. The semiconductor device according to claim 1,

wherein a value of resistance between the first conductive layer and the second conductive layer is 10 MΩ

to 200 MΩ

, inclusive.

4. A semiconductor device comprising:

a first conductive layer;

a first insulator over the first conductive layer;

a circuit portion including a thin film transistor, the circuit portion being over the first insulator;

an antenna over the circuit portion, the antenna being electrically connected to the thin film transistor;

a second insulator over the antenna; and

a second conductive layer over the second insulator, the second conductive layer being conducted to the first conductive layer,

wherein the first insulator and the second insulator are closely attached to be bonded to each other, and

wherein each of the first conductive layer and the second conductive layer comprises one of titanium and a compound of silicon oxide and indium tin oxide.

5. The semiconductor device according to claim 4,

wherein the first insulator and the second insulator are each a structure body in which a fibrous body is impregnated with an organic resin.

6. The semiconductor device according to claim 4,

wherein a value of resistance between the first conductive layer and the second conductive layer is 10 MΩ

to 200 MΩ

, inclusive.

7. A semiconductor device comprising:

a first conductive layer;

a first insulator over the first conductive layer;

a circuit portion including a thin film transistor, the circuit portion being over the first insulator;

a first insulating film over the circuit portion;

a second insulating film over the first insulating film;

an antenna over the circuit portion with the first insulating film and the second insulating film interposed therebetween, the antenna being electrically connected to the thin film transistor;

a third insulating film over the antenna;

a second insulator over the third insulating film; and

a second conductive layer over the second insulator, the second conductive layer being conducted to the first conductive layer,

wherein the first insulating film and the third insulating film are directly in contact with each other in an outer side of the second insulating film and the first insulator and the second insulator are closely attached to be bonded to each other, and

wherein each of the first conductive layer and the second conductive layer comprises one of titanium and a compound of silicon oxide and indium tin oxide.

8. The semiconductor device according to claim 7,

wherein the first insulating film and the third insulating film are each a silicon nitride film.

9. The semiconductor device according to claim 7,

wherein the first insulator and the second insulator are each a structure body in which a fibrous body is impregnated with an organic resin.

10. The semiconductor device according to claim 7,

wherein a value of resistance between the first conductive layer and the second conductive layer is 10 MΩ

to 200 MΩ

, inclusive.

11. A method for manufacturing a semiconductor device, comprising:

forming a circuit portion including a thin film transistor;

forming a first insulating film over the circuit portion and in a peripheral region of the circuit portion;

forming a second insulating film over the first insulating film;

forming an antenna over the circuit portion with the first insulating film and the second insulating film interposed therebetween, the antenna being electrically connected to the thin film transistor;

forming a third insulating film over the first insulating film and the antenna, the third insulating film being directly in contact with the first insulating film in a region of an outer side of the second insulating film in the peripheral region;

forming a first conductive layer over the third insulating film; and

forming a second conductive layer under the circuit portion,

wherein each of the first conductive layer and the second conductive layer is formed of one of titanium and a compound of silicon oxide and indium tin oxide.

12. The method for manufacturing a semiconductor device according to claim 11,

wherein a value of resistance between the first conductive layer and the second conductive layer is 10 MΩ

to 200 MΩ

, inclusive.

13. A method for manufacturing a semiconductor device, comprising:

forming a circuit portion including a thin film transistor;

forming an antenna over the circuit portion, the antenna being electrically connected to the thin film transistor;

placing a first insulator over the antenna;

forming a first conductive layer over the first insulator;

placing a second insulator under the circuit portion; and

forming a second conductive layer under the second insulator,

wherein in a peripheral region of the circuit portion, the first insulator, the first conductive layer, the second insulator, and the second conductive layer are cut and the first conductive layer and the second conductive layer are melted, whereby the first conductive layer and the second conductive layer are conducted with each other at a side surface of the peripheral region,

wherein each of the first conductive layer and the second conductive layer is formed of one of titanium and a compound of silicon oxide and indium tin oxide.

14. The method for manufacturing a semiconductor device according to claim 13,

wherein a means for cutting the first conductive layer, the second insulator, and the second conductive layer is laser light irradiation.

15. The method for manufacturing a semiconductor device according to claim 13,

wherein the first insulator and the second insulator are each a structure body in which a fibrous body is impregnated with an organic resin.

16. The method for manufacturing a semiconductor device according to claim 13,

wherein a value of resistance between the first conductive layer and the second conductive layer is 10 MΩ

to 200 MΩ

, inclusive.

17. A method for manufacturing a semiconductor device, comprising:

forming a circuit portion including a thin film transistor;

forming a first insulating film over the circuit portion and in a peripheral region of the circuit portion;

forming a second insulating film over the first insulating film;

forming an antenna over the circuit portion with the first insulating film and the second insulating film interposed therebetween, the antenna being electrically connected to the thin film transistor;

forming a third insulating film over the first insulating film and the antenna, the third insulating film being directly in contact with the first insulating film in a region of an outer side of the second insulating film in the peripheral region;

placing a first insulator over the second insulating film;

forming a first conductive layer over the first insulator;

removing parts of the first insulating film and the third insulating film in the peripheral region;

placing a second insulator under the circuit portion, the second insulator being closely attached to and bonded to the first insulator in a region in which parts of the first insulating film and the third insulating film are removed of the peripheral region; and

forming a second conductive layer under the second insulator,

wherein in the peripheral region of the circuit portion, the first insulator, the first conductive layer, the second insulator, and the second conductive layer are cut and the first conductive layer and the second conductive layer are melted, whereby the first conductive layer and the second conductive layer are conducted with each other at a side surface of the peripheral region,

wherein each of the first conductive layer and the second conductive layer is formed of one of titanium and a compound of silicon oxide and indium tin oxide.

18. The method for manufacturing a semiconductor device according to claim 17,

wherein a means for cutting the first conductive layer, the second insulator, and the second conductive layer is laser light irradiation.

19. The method for manufacturing a semiconductor device according to claim 17,

wherein the first insulator and the second insulator are each a structure body in which a fibrous body is impregnated with an organic resin.

20. The method for manufacturing a semiconductor device according to claim 17,

wherein a value of resistance between the first conductive layer and the second conductive layer is 10 MΩ

to 200 MΩ

, inclusive.