Methods of integrated shielding into MTJ device for MRAM

• US 8,557,610 B2
• Filed: 02/14/2011
• Issued: 10/15/2013
• Est. Priority Date: 02/14/2011
• Status: Expired due to Fees

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Qualcomm, Inc.
• Inventors: Chen, Wei-Chuan, Li, Xia, Kang, Seung H.
• Primary Examiner(s): Chambliss, Alonzo
• Application Number:
  US13/026,320
• Publication Number:
  US 20120205764A1
• Time in Patent Office: 974 Days
• Field of Search: None
• US Class Current: 438/3
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10B 53/00 Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
• CPC Class Codes: H10B 53/30 characterised by the memory core region
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details

Abstract

Methods and apparatus for shielding a shielding a non-volatile memory, such as shielding a magnetic tunnel junction (MTJ) device from a magnetic flux are provided. In an example, a shielding layer is formed adjacent to an electrode of an MTJ device, such that the shielding layer substantially surrounds a surface of the electrode, and a metal line is coupled to the shielding layer. The metal line can be coupled to the shielding layer by a via.

Claims

1. A method for protecting a magnetic tunnel junction (MTJ) device by utilizing an integrated shielding apparatus, comprising:

forming the MTJ device on a substrate, wherein the MTJ device comprises;

a bottom electrode;

one or more pinned layers on the bottom electrode;

a barrier layer on the one or more pinned layers;

one or more free layers on the barrier layer;

one or more hardmask layers on the one or more free layers; and

a top electrode on the one or more hardmask layers;

forming a shielding layer over the top electrode, such that the shielding layer substantially surrounds a top surface of the top electrode, wherein the shielding layer is formed of a high magnetic permeability material; and

forming a metal line connection on the shielding layer.

2. The method of claim 1, wherein the metal line connection is through a via coupled to the shielding layer.

3. The method of claim 1, further comprising integrating the MTJ device into an apparatus, selected from the group consisting of a set top box, music player, video player, entertainment unit, navigation device, communications device, personal digital assistant (PDA), fixed location data unit, and a computer.

4. A non-transitory computer-readable medium, comprising instructions stored thereon that, if executed by a lithographic device, cause the lithographic device to perform at least a part of a method, comprising:

forming a magnetic tunnel junction (MTJ) device on a substrate, wherein the MTJ device comprises;

a bottom electrode;

one or more pinned layers on the bottom electrode;

a barrier layer on the one or more pinned layers;

one or more free layers on the barrier layer;

one or more hardmask layers on the one or more free layers; and

a top electrode on the one or more hardmask layers;

forming a shielding layer over the top electrode, such that the shielding layer substantially surrounds a top surface of the top electrode, wherein the shielding layer is formed of a high magnetic permeability material; and

forming a metal line connection on the shielding layer.

5. The computer-readable medium of claim 4, wherein the metal line connection is through a via coupled to the shielding layer.

6. A magnetic tunnel junction (MTJ) device protected by an integrated shielding apparatus, comprising:

the MTJ device on a substrate, wherein the MTJ device comprises;

a bottom electrode;

one or more pinned layers on the bottom electrode;

a barrier layer on the one or more pinned layers;

one or more free layers on the barrier layer;

one or more hardmask layers on the one or more free layers; and

a top electrode on the one or more hardmask layers;

a shielding layer over the top electrode, such that the shielding layer substantially surrounds a top surface of the top electrode, wherein the shielding layer is formed of a high magnetic permeability material; and

a metal line connection on the shielding layer.

7. The MTJ device of claim 6, wherein the metal line connection is through a via coupled to the shielding layer.

8. The MTJ device of claim 6, further comprising a device, selected from the group consisting of a set top box, music player, video player, entertainment unit, navigation device, communications device, personal digital assistant (PDA), fixed location data unit, and a computer, with which the top electrode is integrated.

9. A magnetic tunnel junction (MTJ) device protected by an integrated shielding apparatus, comprising:

means for reducing a magnetic field intensity in a vicinity of an MTJ electrode using a shielding layer adjacent to the MTJ electrode, such that the shielding layer substantially surrounds a surface of the MTJ electrode, wherein the shielding layer is formed of a high magnetic permeability material; and

a metal line connection on the shielding layer.

10. The MTJ device of claim 9, wherein the metal line connection is through a via coupled to the shielding layer.

11. The MTJ device of claim 9, further comprising a device, selected from the group consisting of a set top box, music player, video player, entertainment unit, navigation device, communications device, personal digital assistant (PDA), fixed location data unit, and a computer, into which the means for reducing the magnetic field intensity is integrated.

12. A method for protecting a magnetic tunnel junction (MTJ) device by utilizing an integrated shielding apparatus, comprising:

forming the MTJ device on a substrate, wherein the MTJ device comprises;

a bottom electrode;

one or more pinned layers on the bottom electrode;

a barrier layer on the one or more pinned layers;

one or more free layers on the barrier layer; and

one or more hardmask layers on the one or more free layers;

forming a shielding layer over the one or more hardmask layers, such that the shielding layer completely surrounds a top surface of the one or more hardmask layers, wherein the shielding layer is formed of a high magnetic permeability material;

forming a top electrode layer over the shielding layer; and

forming a metal line connection on the top electrode layer.

13. The method of claim 12, wherein the metal line connection is through a via coupled to the second top electrode layer.

14. The method of claim 12, further comprising integrating the MTJ device into an apparatus, selected from the group consisting of a set top box, music player, video player, entertainment unit, navigation device, communications device, personal digital assistant (PDA), fixed location data unit, and a computer.

15. A non-transitory computer-readable medium, comprising instructions stored thereon that, if executed by a lithographic device, cause the lithographic device to perform at least a part of a method, comprising:

forming an MTJ device on a substrate, wherein the MTJ device comprises;

a bottom electrode;

one or more pinned layers on the bottom electrode;

a barrier layer on the one or more pinned layers;

one or more free layers on the barrier layer; and

one or more hardmask layers on the one or more free layers;

forming a shielding layer over the one or more hardmask layers, such that the shielding layer completely surrounds a top surface of the one or more hardmask layers, wherein the shielding layer is formed of a high magnetic permeability material;

forming a top electrode layer over the shielding layer; and

forming a metal line connection on the top electrode layer.

16. The computer-readable medium of claim 15, wherein the metal line connection is through a via coupled to the shielding layer.

17. A magnetic tunnel junction (MTJ) device protected by an integrated shielding apparatus, comprising:

the MTJ device on a substrate, wherein the MTJ device comprises;

a bottom electrode;

one or more pinned layers on the bottom electrode;

a barrier layer on the one or more pinned layers;

one or more free layers on the barrier layer; and

one or more hardmask layers on the one or more free layers;

a shielding layer over the one or more hardmask layers, wherein the shielding layer is formed of a high magnetic permeability material, such that the shielding layer completely surrounds a top surface of the one or more hardmask layers;

a top electrode layer over the shielding layer; and

a metal line connection on the top electrode layer.

18. The MTJ device of claim 17, wherein the metal line connection is through a via coupled to the shielding layer.

19. The MTJ device of claim 17, further comprising a device, selected from the group consisting of a set top box, music player, video player, entertainment unit, navigation device, communications device, personal digital assistant (PDA), fixed location data unit, and a computer, with which the top electrode layer is integrated.

20. A method, comprising:

forming a magnetic tunnel junction (MTJ) device on a substrate, wherein the MTJ device comprises;

an MTJ electrode; and

a shielding layer adjacent to the MTJ electrode and substantially surrounding a surface of the MTJ electrode, wherein the shielding layer is formed of a high magnetic permeability material.

21. The method of claim 20, further comprising forming a metal line connection on the shielding layer.

22. The method of claim 20, further comprising forming a via on the shielding layer.

23. The method of claim 20, further comprising integrating the MTJ device into an apparatus selected from the group consisting of a set top box, music player, video player, entertainment unit, navigation device, communications device, personal digital assistant (PDA), fixed location data unit, and a computer.

24. A non-transitory computer-readable medium, comprising instructions stored thereon that, if executed by a lithographic device, cause the lithographic device to perform at least a part of a method, comprising:

forming a magnetic tunnel junction (MTJ) device on a substrate, wherein the MTJ device comprises;

an MTJ electrode; and

a shielding layer adjacent to the MTJ electrode and substantially surrounding a surface of the MTJ electrode, wherein the shielding layer is formed of a high magnetic permeability material.

25. The computer-readable medium of claim 24, wherein the method further comprises forming a metal line connection on the shielding layer.

26. The computer-readable medium of claim 24, wherein the method further comprises forming a via on the shielding layer.

27. An apparatus, comprising:

an magnetic tunnel junction (MTJ) electrode; and

a shielding layer adjacent to the MTJ electrode and substantially surrounding a surface of the MTJ electrode, wherein the shielding layer is formed of a high magnetic permeability material.

28. The apparatus of claim 27, further comprising a metal line connection on the shielding layer.

29. The apparatus of claim 27, further comprising a via on the shielding layer.

30. The apparatus of claim 27, further comprising a device, selected from the group consisting of a set top box, music player, video player, entertainment unit, navigation device, communications device, personal digital assistant (PDA), fixed location data unit, and a computer, with which the MTJ electrode is integrated.