Method for manufacturing a monolithic LED micro-display on an active matrix panel using flip-chip technology and display apparatus having the monolithic LED micro-display

• US 8,557,616 B2
• Filed: 06/01/2010
• Issued: 10/15/2013
• Est. Priority Date: 12/09/2009
• Status: Active Grant

• Current Assignee: Nano and Advanced Materials Institute Limited
• Original Assignee: Nano and Advanced Materials Institute Limited
• Inventors: Lau, Kei May, Keung, Chi Wing, Liu, Zhaojun
• Primary Examiner(s): CHAUDHARI, CHANDRA P
• Application Number:
  US13/130,442
• Publication Number:
  US 20110309378A1
• Time in Patent Office: 1,232 Days
• Field of Search: 438/35, 438/604
• US Class Current: 438/28
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/40 Materials therefor

Abstract

A high-resolution, Active Matrix (AM) programmed monolithic Light Emitting Diode (LED) micro-array is fabricated using flip-chip technology. The fabrication process includes fabrications of an LED micro-array and an AM panel, and combining the resulting LED micro-array and AM panel using the flip-chip technology. The LED micro-array is grown and fabricated on a sapphire substrate and the AM panel can be fabricated using CMOS process. LED pixels in a same row share a common N-bus line that is connected to the ground of AM panel while p-electrodes of the LED pixels are electrically separated such that each p-electrode is independently connected to an output of drive circuits mounted on the AM panel. The LED micro-array is flip-chip bonded to the AM panel so that the AM panel controls the LED pixels individually and the LED pixels exhibit excellent emission uniformity. According to this constitution, incompatibility between the LED process and the CMOS process can be eliminated.

Claims

1. A method for manufacturing a monolithic Light Emitting Diode (LED) micro-display panel on an Active Matrix (AM) panel, comprising:

providing a substrate of the LED micro-display panel;

overlaying a plurality of layers of material on a surface of the substrate, the plurality of overlaying layers of material being configured in combination to emit light when activated;

patterning the plurality of overlaying layers of material by removing a part of each overlaying layers all the way down to the surface of the substrate;

depositing a current spreading layer on the patterned plurality of overlaying layers of material and surface of the substrate;

providing a metal multilayer on the current spreading layer;

patterning the metal multilayer in such a configuration that a first portion of the metal multilayer, which lies on the patterned plurality of overlaying layers of material, and a second portion of the metal multilayer, which lies on the surface of the substrate are conductively disconnected, thereby forming the monolithic LED micro-display panel; and

combining the monolithic LED micro-display panel with the AM panel, said AM panel comprising a plurality of active control circuit chips with conductive solder material, said combining comprising flip-chip bonding the monolithic LEDs to the active control circuit chips via the conductive solder material, wherein each of the monolithic LEDs is electrically insulated from one another and independently controllable by corresponding ones of the active control circuit chips bonded thereto.

2. The method according to claim 1, wherein the substrate of the LED micro-display panel comprises at least one material selected from the group consisting of:

GaAs, SiC, Semi-insulating GaAs, Sapphire, and Quartz.

3. The method according to claim 1, wherein the plurality of overlaying layers of material include a p-GaN layer, a Multiple Quantum Well (MQW) layer, and n-GaN layer.

4. The method according to claim 1, wherein the current spreading layer forms p-electrodes of the LEDs, and the metal multilayer forms n-electrodes of the LEDs and reflective layers on the p-electronics, and wherein the array of the multiple LEDs are arranged in rows, the method further comprising:

connecting the n-electrodes of LEDs in a same row to a common N-bus line that is connected to a ground of the AM panel; and

connecting the p-electrodes of the multiple LEDs individually to outputs of corresponding active control circuit chips on which the multiple LEDs are flip-chip bonded.

5. The method according to claim 1, wherein the patterning the plurality of overlaying layers of material is performed by Inductively Coupled Plasma (ICP) etching using Plasma-Enhanced Chemical Vapor Deposition (PECVD) grown SiO2 masks.

6. The method according to claim 1, wherein each of the multiple monolithic LEDs has a mesa structure with a size equal to or less than 300×

300 μ

m2.

7. The method according to claim 1, wherein the current spreading layer is a thin layer comprising at least one layer selected from the group consisting of a Ni/Au layer and an Ag/ITO layer.

8. The method according to claim 1, wherein the metal multilayer comprises a Ti/Al/Ti/Au layer.

9. The method according to claim 1, wherein the patterning of the plurality of overlaying layers of material by removing a part thereof all the way down to the surface of the substrate is performed by at least one method selected from the group consisting of wet etching and dry etching.

10. The method according to claim 1, further comprising:

providing a passivation layer on the metal multilayer; and

defining openings in the passivation layer containing contact pads configured for the flip-chip bonding with the conductive solder material of the AM panel.

11. The method according to claim 10, wherein the contact pads contained in the openings defined in the passivation layer comprises Ni/Au.

12. The method according to claim 10, wherein the passivation layer on the metal multilayer comprises at least one selected from the group consisting of:

SiO2, SiNx and photoresist.

13. A method for manufacturing an assembly of a monolithic Light Emitting Diode (LED) micro-display panel including a plurality of LEDs thereon and an Active Matrix (AM) panel, comprising:

providing a substrate of the AM panel;

providing active control circuits on the substrate of the AM panel;

providing conductive solder material on the active control circuits;

providing a substrate of the LED micro-display panel comprising a patterned plurality layers of material overlaid on a surface of the substrate of the LED micro-display panel, and having a current spreading layer on the a patterned plurality of layers and on a surface of the substrate of the LED micro-display panel;

providing a metal multilayer on the current spreading layer and patterning the metal multilayer in a configuration that a first portion of the metal multilayer, which lies on the patterned plurality of overlaying layers of material, and a second portion of the metal multilayer, which lies on the surface of the substrate are conductively disconnected, form the LED micro-display panel; and

combining the AM panel with the LED micro-display panel comprising monolithic LEDs electrically insulated from one another, and flip-chip bonding the active control circuits to the plurality of monolithic LEDs via the conductive solder material, with the monolithic LEDs independently controllable by the active control circuits.

14. The method according to claim 13, further comprising:

depositing a passivation layer on the AM panel;

defining holes on the passivation layer;

depositing a seed layer by sputtering on the passivation layer;

coating a photoresist on the seed layer; and

patterning the photoresist by photolithography.

15. The method according to claim 13, further comprising providing the active control circuits on the substrate of the AM panel in a Complimentary Metal-Oxide Semiconductor (CMOS) fabrication process.

16. The method according to claim 13, further comprising:

thinning and dicing the LED micro-display panel; and

flipping the diced LED micro-display panel onto the AM panel in such a configuration that each of the plurality of LEDs on the diced LED micro-display panel faces corresponding one of the active control circuits on the AM panel.

17. The method according to claim 13, further comprising forming the conductive solder material in a ball shape after reflow in furnace.