Thin film transistors having multi-layer channel
First Claim
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1. A thin film transistor, comprising:
- a gate insulating layer;
a gate electrode formed on a bottom side of the gate insulating layer;
a channel layer formed on a top side of the gate insulating layer;
a source electrode that contacts a first portion of the channel layer; and
a drain electrode that contacts a second portion of the channel layer;
wherein the channel layer has a double-layer structure, including an uppermost layer and a lower layer, the lower layer being disposed between the uppermost layer and the gate insulating layer,wherein the uppermost layer has a carrier concentration lower than that of the lower layer, andwherein the uppermost layer is doped with a carrier acceptor in order to have an electrical resistance higher than that of the lower layer.
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Abstract
A transistor may include: a gate insulting layer, a gate electrode formed on a bottom side of the gate insulating layer, a channel layer formed on a top side of the gate insulating layer, a source electrode that contacts a first portion of the channel layer, and a drain electrode that contacts a second portion of the channel layer. The channel layer may have a double-layer structure, including an upper layer and a lower layer. The upper layer may have a carrier concentration lower than that of the lower layer. The upper layer may be doped with a carrier acceptor in order to have an electrical resistance higher than that of the lower layer.
87 Citations
6 Claims
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1. A thin film transistor, comprising:
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a gate insulating layer; a gate electrode formed on a bottom side of the gate insulating layer; a channel layer formed on a top side of the gate insulating layer; a source electrode that contacts a first portion of the channel layer; and a drain electrode that contacts a second portion of the channel layer; wherein the channel layer has a double-layer structure, including an uppermost layer and a lower layer, the lower layer being disposed between the uppermost layer and the gate insulating layer, wherein the uppermost layer has a carrier concentration lower than that of the lower layer, and wherein the uppermost layer is doped with a carrier acceptor in order to have an electrical resistance higher than that of the lower layer. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification