Laser material removal methods and apparatus

• US 8,569,650 B2
• Filed: 08/02/2012
• Issued: 10/29/2013
• Est. Priority Date: 08/26/2008
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Zhang, Zhenhua, Rana, Virendra V. S., Shah, Vinay K., Eberspacher, Chris
• Primary Examiner(s): TRINH, MICHAEL MANH
• Application Number:
  US13/565,455
• Publication Number:
  US 20120295440A1
• Time in Patent Office: 453 Days
• Field of Search: 219/121.67, 219/121.68, 219/121.78, 219/121.72, 438/676
• US Class Current: 219/121.67
• CPC Class Codes: B23K 2101/40 Semiconductor devices
• CPC Class Codes: B23K 2103/50 Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
• CPC Class Codes: B23K 26/03 Observing, e.g. monitoring, the workpiece
• CPC Class Codes: B23K 26/06 Shaping the laser beam, e.g. by masks or multi-focusing
• CPC Class Codes: B23K 26/0624 using ultrashort pulses, i.e. pulses of 1ns or less
• CPC Class Codes: B23K 26/082 Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
• CPC Class Codes: B23K 26/0853 Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
• CPC Class Codes: B23K 26/364 for making a groove or trench, e.g. for scribing a break initiation groove
• CPC Class Codes: B23K 26/40 taking account of the properties of the material involved
• CPC Class Codes: H01L 31/022441 Electrode arrangements specially adapted for back-contact solar cells
• CPC Class Codes: H01L 31/0682 back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells

Abstract

Embodiments of the present invention generally provide methods and apparatus for material removal using lasers in the fabrication of solar cells. In one embodiment, an apparatus is provided that removes portions of a dielectric layer deposited on a solar cell substrate according to a desired pattern. In certain embodiments, methods for removing a portion of a material via a laser without damaging the underlying substrate are provided. In one embodiment, the intensity profile of the beam is adjusted so that the difference between the maximum and minimum intensity within a spot formed on a substrate surface is reduced to an optimum range. In one example, the substrate is positioned such that the peak intensity at the center versus the periphery of the substrate is lowered. In one embodiment, the pulse energy is improved to provide thermal stress and physical lift-off of a desired portion of a dielectric layer.

Claims

1. A method of laser material removal, comprising:

thermally stressing a region of dielectric material deposited on a substrate by positioning the substrate out of focus of a light emitted from a laser such that a portion of the light strikes the dielectric material above an ablation threshold of the dielectric material and strikes the substrate beneath an ablation threshold of the substrate to remove the dielectric material from the region without damaging the substrate.

2. The method of claim 1, wherein the removing the dielectric material comprises ablating the dielectric material without damaging the substrate.

3. The method of claim 1, wherein the thermally stressing the region of dielectric material comprises setting parameters of the laser such that a portion of light emitted from the laser strikes the dielectric material above an ablation threshold of the dielectric material and strikes the substrate beneath an ablation threshold of the substrate.

4. The method of claim 3, wherein the removing the dielectric material comprises ablating the dielectric material without damaging the substrate.

5. The method of claim 1, wherein the removing the dielectric material comprises physically removing the dielectric material without ablating the dielectric material.

6. The method of claim 1, wherein the dielectric material is adjacent the substrate.

7. The method of claim 1, wherein the substrate is a silicon substrate.

8. The method of claim 7, wherein the dielectric material is silicon oxide.

9. A method for processing a substrate, comprising:

depositing a dielectric material on a surface of a silicon substrate;

thermally stressing a portion of the dielectric material in a desired pattern by positioning the silicon substrate out of focus of a light emitted from a laser such that a portion of the light strikes the dielectric material above an ablation threshold of the dielectric material and strikes the silicon substrate beneath an ablation threshold of the silicon substrate to remove the dielectric material from the portion of the dielectric material in the desired pattern without damaging the silicon substrate.

10. The method of claim 9, wherein the removing the dielectric material comprises ablating the dielectric material without damaging the silicon substrate.

11. The method of claim 9, wherein the thermally stressing the portion of the dielectric material comprises setting parameters of the laser such that a portion of light emitted from the laser strikes the dielectric material above an ablation threshold of the dielectric material and strikes the silicon substrate beneath an ablation threshold of the silicon substrate.

12. The method of claim 11, wherein the removing the dielectric material comprises ablating the dielectric material without damaging the silicon substrate.

13. The method of claim 9, wherein the removing the dielectric material comprises physically removing the dielectric material without ablating the dielectric material.

14. The method of claim 9, wherein the dielectric material is silicon oxide.

15. A method of laser material removal, comprising:

emitting a light from a laser source to form a light spot on a region of a dielectric material deposited on a substrate, wherein a peak intensity at the center of the light spot is relatively higher than a peripheral intensity along the periphery of the light spot; and

thermally stressing the region of the dielectric material within the light spot by positioning the substrate out of focus of the light such that a portion of the light strikes the dielectric material above an ablation threshold of the dielectric material and strikes the substrate beneath an ablation threshold of the substrate to remove the dielectric material from the region without damaging the substrate.