Ultra low pressure sensor
First Claim
Patent Images
1. A sensor including:
- a backplate including a plurality of backplate holes;
a cavity extending above the plurality of backplate holes;
a diaphragm of electrically conductive or semi-conductive material that is connected to, and insulated from the backplate, the diaphragm defining a flexible member and an air gap extending below the plurality of backplate holes and associated with the flexible member;
a first bond pad formed on an area of the back plate surrounding the cavity; and
a second bond pad formed on an area of the diaphragm surrounding the air gap;
wherein the flexible member and air gap defined by the diaphragm extend beneath the plurality of backplate holes, wherein the diaphragm is formed from silicon-on-insulator (SOI) wafer including a layer of heavily doped silicon, a layer of silicon and an intermediate oxide layer, and wherein the backplate is formed from a silicon wafer including an oxide layer on only one side thereof.
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Abstract
A sensor for acoustic applications such as a silicone microphone is provided containing a backplate provided with apertures and a flexible diaphragm formed from a silicon on insulator (SOI) wafer which includes a layer of heavily doped silicon, a layer of silicon and an intermediate oxide layer that is connected to, and insulated from the backplate. The arrangement of the diaphragm in relation to the rest of the sensor and the sensor location, being mounted over the aperture in a PCB, reduces the acoustic signal pathway which allows the sensor to be both thinner and more importantly, enables there to be a greater back volume.
37 Citations
4 Claims
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1. A sensor including:
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a backplate including a plurality of backplate holes; a cavity extending above the plurality of backplate holes; a diaphragm of electrically conductive or semi-conductive material that is connected to, and insulated from the backplate, the diaphragm defining a flexible member and an air gap extending below the plurality of backplate holes and associated with the flexible member; a first bond pad formed on an area of the back plate surrounding the cavity; and a second bond pad formed on an area of the diaphragm surrounding the air gap; wherein the flexible member and air gap defined by the diaphragm extend beneath the plurality of backplate holes, wherein the diaphragm is formed from silicon-on-insulator (SOI) wafer including a layer of heavily doped silicon, a layer of silicon and an intermediate oxide layer, and wherein the backplate is formed from a silicon wafer including an oxide layer on only one side thereof. - View Dependent Claims (2, 3, 4)
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Specification