Thin film transistor (TFT) having copper electrodes

• US 8,581,248 B2
• Filed: 08/25/2010
• Issued: 11/12/2013
• Est. Priority Date: 08/26/2009
• Status: Expired due to Fees

• Current Assignee: Heraeus Deutschland GmbH & Co. KG (Heraeus Holding GMBH)
• Original Assignee: Heraeus Materials Technology GmbH & Co. KG (Heraeus Holding GMBH)
• Inventors: Schneider-Betz, Sabine, Schlott, Martin
• Primary Examiner(s): Le, Thao P.
• Application Number:
  US13/390,388
• Publication Number:
  US 20120146018A1
• Time in Patent Office: 1,175 Days
• Field of Search: 257/43
• US Class Current: 257/43
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A TFT structure is provided in which an oxidic semiconductor is used in combination with an electrode material based on a Cu alloy.

Claims

1. A TFT structure comprising a semiconductor material and at least one electrode, wherein the semiconductor material is an oxidic semiconductor material, the at least one electrode comprises an electrode material based on a Cu alloy comprising at least one alloying element at a concentration of 0.1 to 10 at %, the at least one alloying element forming an oxidic intermediate layer at a boundary surface between the electrode material and the oxidic semiconductor material, and wherein the TFT structure comprises at least a source electrode and a drain electrode consisting essentially of the Cu alloy.

2. The TFT structure according to claim 1, wherein the structure is provided as bottom-gate or top-gate.

3. The TFT structure according to claim 1, wherein the oxidic semiconductor material comprises at least one oxide selected from indium oxide, zinc oxide, copper oxide, and mixed oxides based on at least one metal selected from indium, zinc, and copper.

4. The TFT structure according to claim 3, wherein the oxidic semiconductor material is selected from an In—

Ga—

Zn oxide, a Cu—

Cr oxide, and a Cu—

Al oxide.

5. The TFT structure according to claim 1, wherein at least one alloying element of the Cu alloy has a higher oxygen affinity than copper.

6. The TFT structure according to claim 1, wherein at least one alloying element of the Cu alloy has a higher oxygen affinity than at least one chemical element of the oxidic semiconductor material.

7. The TFT structure according to claim 1, wherein the Cu alloy contains at least one element selected from Mg, Mn, Ga, Li, Mo, and W, at a concentration of 0.1-10 at %.

8. The TFT structure according to claim 5, further comprising a pure Cu layer having a purity of at least 99.9% as a further electrode material, wherein the Cu alloy is applied as an intermediate layer over and/or under the pure Cu layer, and wherein the intermediate layer is thinner than the pure Cu layer.

9. The TFT structure according to claim 6, further comprising a pure Cu layer having a purity of at least 99.9% as a further electrode material, wherein the Cu alloy is applied as an intermediate layer over and/or under the pure Cu layer, and wherein the intermediate layer is thinner than the pure Cu layer.

10. The TFT structure according to claim 7, further comprising a pure Cu layer having a purity of at least 99.9% as a further electrode material, wherein the Cu alloy is applied as an intermediate layer over and/or under the pure Cu layer, and wherein the intermediate layer is thinner than the pure Cu layer.