Solid-state imaging device

  • US 8,592,880 B2
  • Filed: 09/25/2012
  • Issued: 11/26/2013
  • Est. Priority Date: 03/07/2003
  • Status: Active Grant
First Claim
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1. An imaging device formed in a semiconductor substrate, comprising:

  • a plurality of photodiodes arranged in rows and columns, each photodiode for a given row of photodiodes formed in a corresponding active region of the semiconductor substrate;

    a transfer gate disposed over the corresponding active region so as to define an associated photodiode on one side of the transfer gate and an associated floating diffusion element on another side of the transfer gate;

    an amplifier transistor;

    a reset transistor;

    a first wire electrically connecting the associated floating diffusion element to a gate electrode of the amplifier transistor,a first contact hole connected to a second wire disposed over the semiconductor substrate and being for receiving an output of a source of the amplifier transistor; and

    a second contact hole connecting a drain of the reset transistor to a third wire disposed over the first semiconductor substrate,wherein the amplifier transistor is formed in another active region which is separated from the corresponding active region where the associated floating diffusion element connected to the gate electrode of the amplifier transistor is formed,the first wire is disposed in a column direction between the associated floating diffusion element and the gate electrode of the associated amplifier transistor, andthe first contact hole and the second contact hole are aligned substantially in the column direction.

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