Method for bonding a tantalum structure to a cobalt-alloy substrate

• US 8,602,290 B2
• Filed: 04/22/2011
• Issued: 12/10/2013
• Est. Priority Date: 10/10/2007
• Status: Active Grant

• Current Assignee: Zimmer Incorporated (Zimmer Biomet Holdings, Inc.)
• Original Assignee: Zimmer Incorporated (Zimmer Biomet Holdings, Inc.)
• Inventors: Hippensteel, Gregory M., Peek, Lawrence F., Anderson, Jeffrey P., Gorhe, Devendra, Allen, Steve M., Scrafton, Joel G., Harmon, Casey
• Primary Examiner(s): D'Aniello, Nicholas P
• Application Number:
  US13/092,174
• Publication Number:
  US 20110233263A1
• Time in Patent Office: 963 Days
• Field of Search: 228/193, 228/194, 228/262.1, 228/262.71, 428/613, 428/660
• US Class Current: 228/194
• CPC Class Codes: A61F 2/30767 Special external or bone-contacting surface, e.g. coating for improving bone ingrowth
• CPC Class Codes: A61F 2002/3092 having an open-celled or open-pored structure
• CPC Class Codes: A61F 2002/30929 having at least two superposed coatings
• CPC Class Codes: A61F 2310/00029 Cobalt-based alloys, e.g. Co-Cr alloys or Vitallium
• CPC Class Codes: A61F 2310/00544 Coating made of tantalum or Ta-based alloys
• CPC Class Codes: B23K 20/02 by means of a press ; Diffusion bonding B23K20/001, B23K20/04 take precedence
• CPC Class Codes: B23K 20/16 with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
• CPC Class Codes: B23K 20/233 without ferrous layer
• CPC Class Codes: B23K 2103/08 Non-ferrous metals or alloys
• CPC Class Codes: B23K 2103/18 Dissimilar materials
• CPC Class Codes: B23K 2103/26 Alloys of Nickel and Cobalt and Chromium
• CPC Class Codes: Y10T 428/12479 Porous [e.g., foamed, spongy, cracked, etc.]
• CPC Class Codes: Y10T 428/12806 Refractory [Group IVB, VB, or VIB] metal-base component

Abstract

A method for bonding a porous tantalum structure to a substrate is provided. The method comprises providing a substrate comprising cobalt or a cobalt-chromium alloy; an interlayer consisting essentially of at least one of hafnium, manganese, niobium, palladium, zirconium, titanium, or alloys or combinations thereof; and a porous tantalum structure. Heat and pressure are applied to the substrate, the interlayer, and the porous tantalum structure to achieve solid-state diffusion between the substrate and the interlayer and between the interlayer and the porous tantalum structure.

Claims

1. A method for bonding a porous tantalum structure to a substrate, comprising:

providing a substrate comprising cobalt or a cobalt-chromium alloy;

providing a porous tantalum structure;

applying an interlayer consisting essentially of at least one of hafnium, manganese, niobium, palladium, zirconium, titanium, or alloys or combinations thereof to a surface of the porous tantalum structure, wherein the interlayer is applied to the surface by at least one of thermal spraying, plasma spraying, electron beam deposition, laser deposition, chemical vapor deposition, or electrodeposition;

positioning the substrate in contact with the interlayer thereby forming an assembly, wherein the interlayer is between the substrate and the porous tantalum structure; and

applying heat and pressure to the assembly for a time sufficient to concurrently achieve solid-state diffusion between the substrate and the interlayer and solid-state diffusion between the interlayer and the porous tantalum structure.

2. The method of claim 1, wherein the interlayer is at least about 0.020 inches thick.

3. The method of claim 1, wherein the interlayer is at least about 0.010 inches thick.

4. The method of claim 1, wherein the interlayer has a porosity of between about 20% and about 40%.

5. The method of claim 1, wherein applying the interlayer includes plasma spraying the interlayer onto the surface in at least a partial vacuum.

6. The method of claim 1, wherein applying pressure includes applying at least approximately 200 psi to the assembly.

7. The method of claim 1, wherein said interlayer has a top surface and a bottom surface, and wherein said applying heat and pressure to the assembly achieves solid-state diffusion between the substrate and the bottom surface of the interlayer and solid-state diffusion between the top surface of the interlayer and the porous tantalum structure.

8. The method of claim 1, wherein applying heat includes heating the assembly to less than about 1000°

C. in a vacuum environment.

9. The method of claim 1, wherein the interlayer has a thickness of at least about 0.010 inches and applying heat and pressure includes applying a pressure of at least about 200 psi and heating the assembly to at least about 540°

C. for at least one hour to achieve solid-state diffusion between the substrate and the interlayer and between the interlayer and the porous tantalum structure.