Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
First Claim
1. A semiconductor film comprising a ternary compound of zinc, oxygen, and nitrogen, wherein the semiconductor film has a sheet resistance of between about 100 ohm/sq to about 1×
- 105 ohm/sq, and wherein the ternary compound comprises ZnNxOy and a dopant.
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Abstract
The present invention generally comprises a semiconductor film and the reactive sputtering process used to deposit the semiconductor film. The sputtering target may comprise pure zinc (i.e., 99.995 atomic percent or greater), which may be doped with aluminum (about 1 atomic percent to about 20 atomic percent) or other doping metals. The zinc target may be reactively sputtered by introducing nitrogen and oxygen to the chamber. The amount of nitrogen may be significantly greater than the amount of oxygen and argon gas. The amount of oxygen may be based upon a turning point of the film structure, the film transmittance, a DC voltage change, or the film conductivity based upon measurements obtained from deposition without the nitrogen containing gas. The reactive sputtering may occur at temperatures from about room temperature up to several hundred degrees Celsius. After deposition, the semiconductor film may be annealed to further improve the film mobility.
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9 Claims
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1. A semiconductor film comprising a ternary compound of zinc, oxygen, and nitrogen, wherein the semiconductor film has a sheet resistance of between about 100 ohm/sq to about 1×
- 105 ohm/sq, and wherein the ternary compound comprises ZnNxOy and a dopant.
- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
Specification