Heat treatment method for promoting crystallization of high dielectric constant film
First Claim
1. A method of heating a substrate including a high dielectric constant film formed on a silicon-germanium layer to promote the crystallization of said high dielectric constant film, said method comprising the steps of:
- (a) forming a first silicon-germanium layer on a substrate, said first silicon-germanium layer including a second silicon-germanium layer with a first germanium concentration and third silicon-germanium layers with a second germanium concentration higher than said first germanium concentration, said second silicon-germanium layer being sandwiched between said third silicon-germanium layers;
(b) forming a film of silicon dioxide on said second silicon-germanium layer, and forming a high dielectric constant film on said film of silicon dioxide;
(c) heating said substrate including said high dielectric constant film formed thereon at a predetermined preheating temperature;
(d) irradiating said substrate with light to increase the temperature of a front surface of said substrate from said preheating temperature to a target temperature for a time period in the range of 3 milliseconds to 1 second; and
(e) irradiating said substrate with light to maintain the temperature of the front surface of said substrate within a ±
25°
C. range around said target temperature for a time period in the range of 3 milliseconds to 1 second, said step (e) being performed after said step (d).
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Accused Products
Abstract
A film of silicon dioxide is formed on the silicon-germanium layer, and a high dielectric constant film is further formed on the film of silicon dioxide. First irradiation from a flash lamp is performed on the semiconductor wafer to increase the temperature of a front surface of the semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 3 milliseconds to 1 second. Subsequently, second irradiation from the flash lamp is performed to maintain the temperature of the front surface of the semiconductor wafer within a ±25° C. range around the target temperature for a time period in the range of 3 milliseconds to 1 second. This promotes the crystallization of the high dielectric constant film while suppressing the alleviation of distortion in the silicon-germanium layer.
19 Citations
8 Claims
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1. A method of heating a substrate including a high dielectric constant film formed on a silicon-germanium layer to promote the crystallization of said high dielectric constant film, said method comprising the steps of:
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(a) forming a first silicon-germanium layer on a substrate, said first silicon-germanium layer including a second silicon-germanium layer with a first germanium concentration and third silicon-germanium layers with a second germanium concentration higher than said first germanium concentration, said second silicon-germanium layer being sandwiched between said third silicon-germanium layers; (b) forming a film of silicon dioxide on said second silicon-germanium layer, and forming a high dielectric constant film on said film of silicon dioxide; (c) heating said substrate including said high dielectric constant film formed thereon at a predetermined preheating temperature; (d) irradiating said substrate with light to increase the temperature of a front surface of said substrate from said preheating temperature to a target temperature for a time period in the range of 3 milliseconds to 1 second; and (e) irradiating said substrate with light to maintain the temperature of the front surface of said substrate within a ±
25°
C. range around said target temperature for a time period in the range of 3 milliseconds to 1 second, said step (e) being performed after said step (d). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification