Method for forming substrate with buried insulating layer

  • US 8,633,090 B2
  • Filed: 07/10/2010
  • Issued: 01/21/2014
  • Est. Priority Date: 07/10/2009
  • Status: Active Grant
First Claim
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1. A method for forming an edge-chamfered substrate with a buried insulating layer, comprising the following steps of:

  • providing a first substrate for forming a top semiconductor layer of the substrate with the buried insulating layer;

    forming an etching mask layer on the surface of the first substrate;

    chamfering the first substrate and the etching mask layer on the surface of the first substrate by edge grinding;

    by spin etching, etching the first substrate which is exposed by the edge grinding on the etching mask layer;

    providing a second substrate for forming a handle layer of the substrate with a buried insulating layer; and

    bonding the first substrate to the second substrate via a buried insulating layer, wherein the edge-grinded surface of the first substrate faces the second substrate.

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