Metal heterocyclic compounds for deposition of thin films
First Claim
Patent Images
1. A method of forming a metal containing film on a substrate, comprising:
- a) providing a reactor and at least one substrate disposed therein;
b) introducing a metal precursor into the reactor, wherein the metal precursor is selected from the group consisting of;
Te(CH3NCH2CH2NCH3);
Te(C2H5NCH2CH2NC2H5);
Te(NCH(CH3)2CH2CH2NCH(CH3)2);
Te(NC(CH3)3CH2CH2NC(CH3)3);
Te(NCH(CH3)2C(CH3)HC(CH3)HNCH(CH3)2);
Ti(CH3NCH2CH2NCH3);
Ti(C2H5NCH2CH2NC2H5);
Ti(NCH(CH3)2CH2CH2NCH(CH3)2);
Ti(NC(CH3)3CH2CH2NC(CH3)3);
Ti(NCH(CH3)2C(CH3)HC(CH3)HNCH(CH3)2);
Si(CH3NCH2CH2NCH3);
Si(C2H5NCH2CH2NC2H5);
Si(NCH(CH3)2CH2CH2NCH(CH3)2);
Si(NC(CH3)3CH2CH2NC(CH3)3);
Si(NCH(CH3)2C(CH3)HC(CH3)HNCH(CH3)2);
Sn(CH3NCH2CH2NCH3);
Sn(C2H5NCH2CH2NC2H5);
Sn(NCH(CH3)2CH2CH2NCH(CH3)2);
Sn(NC(CH3)3CH2CH2NC(CH3)3);
Sn(NCH(CH3)2C(CH3)HC(CH3)HNCH(CH3)2);
(NC(CH3)3CH2CH2NC(CH3)3)Ti(NC(CH3)3CH2CH2NC(CH3)3);
(NC(CH3)3CH2CH2NC(CH3)3)Si(NC(CH3)3CH2CH2NC(CH3)3);
(NC(CH3)3CH2CH2NC(CH3)3)Te(NC(CH3)3CH2CH2NC(CH3)3);
(NC(CH3)3CH2CH2NC(CH3)3)Sn(NC(CH3)3CH2CH2NC(CH3)3);
Fe(NC(CH3)3CH2CH2NC(CH3)3)3;
Ru(NC(CH3)3CH2CH2NC(CH3)3)3;
Sb(N(CH3)CH2CH2N(CH3))(NMe2);
Sb(N(CH3)CH2CH2N(CH3))(CH3);
Sb(N(CH3)CH2CH2N(CH3))(C2H5);
Sb(NC(CH3)3CH2CH2NC(CH3)3)(NMe2);
Sb(NC(CH3)3CH2CH2NC(CH3)3)(CH3);
Sb(NC(CH3)3CH2CH2NC(CH3)3)(C2H5);
Ti(NC(CH3)3CH2CH2NC(CH3)3)(N(CH3)2)2;
Si(NC(CH3)3CH2CH2NC(CH3)3)(N(CH3)2)2;
Hf(NC(CH3)3CH2CH2NC(CH3)3)(N(CH3)2)2;
Zr(NC(CH3)3CH2CH2NC(CH3)3)(N(CH3)2)2;
Ni(SiNC(CH3)3CH2CH2NC(CH3)3)4, Sn(NC(CH3)3CH2CH2NC(CH3)3)(N(CH3)2)2;
Ti(N(C(CH3)3)CH2CH2N(C(CH3)3)(CH3)2;
Si(N(C(CH3)3)CH2CH2N(C(CH3)3)(CH3)2;
Hf(N(C(CH3)3)CH2CH2N(C(CH3)3)(CH3)2;
Zr(N(C(CH3)3)CH2CH2N(C(CH3)3)(CH3)2;
Ti(N(C(CH3)3)CH2CH2N(C(CH3)3)(C2H5)2;
Si(N(C(CH3)3)CH2CH2N(C(CH3)3)(C2H5)2;
Hf(N(C(CH3)3)CH2CH2N(C(CH3)3)(C2H5)2;
Zr(N(C(CH3)3)CH2CH2N(C(CH3)3)(C2H5)2;
Ru(N(C(CH3)3)CH2CH2N(C(CH3)3)(iPrNC(CH3)NiPr)2;
Fe(N(C(CH3)3)CH2CH2N(C(CH3)3)(iPrNC(CH3)NiPr)2;
Os(N(C(CH3)3)CH2CH2N(C(CH3)3)(iPrNC(CH3)NiPr)2;
Ta(NC(CH3)3CH2CH2NC(CH3)3)(NMe2)3;
Nb(NC(CH3)3CH2CH2NC(CH3)3)(NMe2)3;
Nb(NC(CH3)3CH2CH2NC(CH3)3)(CH3)3;
Nb(NC(CH3)3CH2CH2NC(CH3)3)(C2H5)3;
Os(N(C(CH3)3CH2CH2N(C(CH3)3)2(C5H5);
Fe(N(C(CH3)3CH2CH2N(C(CH3)3)2(C5H5);
Ru(N(C(CH3)3CH2CH2N(C(CH3)3)2(C5H5);
Ti(N(CH3)CH2CH2CH2N(CH3));
Ti(NC(CH3)3CH2CH2CH2N(CH3)3);
Si(N(CH3)CH2CH2CH2N(CH3));
Si(NC(CH3)3CH2CH2CH2N(CH3)3);
Ti(N(CH3)CH2CH2CH2N(CH3))2;
Ti(N(C2H5)CH2CH2CH2N(C2H5))2;
Si(N(CH3)CH2CH2CH2N(CH3))2; and
Si(N(C2H5)CH2CH2CH2N(C2H5))2;
c) maintaining the reactor at a temperature of at least about 100°
C.; and
d) decomposing the metal precursor onto the substrate to form a metal containing film.
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Abstract
Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A metal containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. A metal is deposited on to the substrate through a deposition process to form a thin film on the substrate.
23 Citations
16 Claims
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1. A method of forming a metal containing film on a substrate, comprising:
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a) providing a reactor and at least one substrate disposed therein; b) introducing a metal precursor into the reactor, wherein the metal precursor is selected from the group consisting of; Te(CH3NCH2CH2NCH3);
Te(C2H5NCH2CH2NC2H5);
Te(NCH(CH3)2CH2CH2NCH(CH3)2);
Te(NC(CH3)3CH2CH2NC(CH3)3);
Te(NCH(CH3)2C(CH3)HC(CH3)HNCH(CH3)2);
Ti(CH3NCH2CH2NCH3);
Ti(C2H5NCH2CH2NC2H5);
Ti(NCH(CH3)2CH2CH2NCH(CH3)2);
Ti(NC(CH3)3CH2CH2NC(CH3)3);
Ti(NCH(CH3)2C(CH3)HC(CH3)HNCH(CH3)2);
Si(CH3NCH2CH2NCH3);
Si(C2H5NCH2CH2NC2H5);
Si(NCH(CH3)2CH2CH2NCH(CH3)2);
Si(NC(CH3)3CH2CH2NC(CH3)3);
Si(NCH(CH3)2C(CH3)HC(CH3)HNCH(CH3)2);
Sn(CH3NCH2CH2NCH3);
Sn(C2H5NCH2CH2NC2H5);
Sn(NCH(CH3)2CH2CH2NCH(CH3)2);
Sn(NC(CH3)3CH2CH2NC(CH3)3);
Sn(NCH(CH3)2C(CH3)HC(CH3)HNCH(CH3)2);
(NC(CH3)3CH2CH2NC(CH3)3)Ti(NC(CH3)3CH2CH2NC(CH3)3);
(NC(CH3)3CH2CH2NC(CH3)3)Si(NC(CH3)3CH2CH2NC(CH3)3);
(NC(CH3)3CH2CH2NC(CH3)3)Te(NC(CH3)3CH2CH2NC(CH3)3);
(NC(CH3)3CH2CH2NC(CH3)3)Sn(NC(CH3)3CH2CH2NC(CH3)3);
Fe(NC(CH3)3CH2CH2NC(CH3)3)3;
Ru(NC(CH3)3CH2CH2NC(CH3)3)3;
Sb(N(CH3)CH2CH2N(CH3))(NMe2);
Sb(N(CH3)CH2CH2N(CH3))(CH3);
Sb(N(CH3)CH2CH2N(CH3))(C2H5);
Sb(NC(CH3)3CH2CH2NC(CH3)3)(NMe2);
Sb(NC(CH3)3CH2CH2NC(CH3)3)(CH3);
Sb(NC(CH3)3CH2CH2NC(CH3)3)(C2H5);
Ti(NC(CH3)3CH2CH2NC(CH3)3)(N(CH3)2)2;
Si(NC(CH3)3CH2CH2NC(CH3)3)(N(CH3)2)2;
Hf(NC(CH3)3CH2CH2NC(CH3)3)(N(CH3)2)2;
Zr(NC(CH3)3CH2CH2NC(CH3)3)(N(CH3)2)2;
Ni(SiNC(CH3)3CH2CH2NC(CH3)3)4, Sn(NC(CH3)3CH2CH2NC(CH3)3)(N(CH3)2)2;
Ti(N(C(CH3)3)CH2CH2N(C(CH3)3)(CH3)2;
Si(N(C(CH3)3)CH2CH2N(C(CH3)3)(CH3)2;
Hf(N(C(CH3)3)CH2CH2N(C(CH3)3)(CH3)2;
Zr(N(C(CH3)3)CH2CH2N(C(CH3)3)(CH3)2;
Ti(N(C(CH3)3)CH2CH2N(C(CH3)3)(C2H5)2;
Si(N(C(CH3)3)CH2CH2N(C(CH3)3)(C2H5)2;
Hf(N(C(CH3)3)CH2CH2N(C(CH3)3)(C2H5)2;
Zr(N(C(CH3)3)CH2CH2N(C(CH3)3)(C2H5)2;
Ru(N(C(CH3)3)CH2CH2N(C(CH3)3)(iPrNC(CH3)NiPr)2;
Fe(N(C(CH3)3)CH2CH2N(C(CH3)3)(iPrNC(CH3)NiPr)2;
Os(N(C(CH3)3)CH2CH2N(C(CH3)3)(iPrNC(CH3)NiPr)2;
Ta(NC(CH3)3CH2CH2NC(CH3)3)(NMe2)3;
Nb(NC(CH3)3CH2CH2NC(CH3)3)(NMe2)3;
Nb(NC(CH3)3CH2CH2NC(CH3)3)(CH3)3;
Nb(NC(CH3)3CH2CH2NC(CH3)3)(C2H5)3;
Os(N(C(CH3)3CH2CH2N(C(CH3)3)2(C5H5);
Fe(N(C(CH3)3CH2CH2N(C(CH3)3)2(C5H5);
Ru(N(C(CH3)3CH2CH2N(C(CH3)3)2(C5H5);
Ti(N(CH3)CH2CH2CH2N(CH3));
Ti(NC(CH3)3CH2CH2CH2N(CH3)3);
Si(N(CH3)CH2CH2CH2N(CH3));
Si(NC(CH3)3CH2CH2CH2N(CH3)3);
Ti(N(CH3)CH2CH2CH2N(CH3))2;
Ti(N(C2H5)CH2CH2CH2N(C2H5))2;
Si(N(CH3)CH2CH2CH2N(CH3))2; and
Si(N(C2H5)CH2CH2CH2N(C2H5))2;c) maintaining the reactor at a temperature of at least about 100°
C.; andd) decomposing the metal precursor onto the substrate to form a metal containing film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Current AssigneeL'Air Liquide Societe Anonyme Pour L'Etude et L'Exploitation Des Procedes Georges Claude (L'Air Liquide SA)
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Original AssigneeL'Air Liquide Societe Anonyme Pour L'Etude et L'Exploitation Des Procedes Georges Claude (L'Air Liquide SA)
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InventorsGatineau, Julien, Yanagita, Kazutaka, Okubo, Shingo
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Primary Examiner(s)MCDONOUGH, JAMES E
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Application NumberUS12/492,000Publication NumberTime in Patent Office1,678 DaysField of Search117/104, 117/84, 117/88, 117/200US Class Current117/104CPC Class CodesC01G 23/00 Compounds of titanium prepa...C01G 25/02 OxidesC23C 16/18 from metallo-organic compoundsC23C 16/34 Nitrides C23C16/303 takes p...C23C 16/405 of refractory metals or ytt...Y10T 117/10 Apparatus
