Plasma processing apparatus, plasma processing method and storage medium
First Claim
1. A plasma processing apparatus having a processing chamber and a mounting table provided within the processing chamber for processing a substrate mounted on the mounting table by plasma of a processing gas, the apparatus comprising:
- a grounded first electrode and a second electrode under the first electrode, and wherein the first electrode and the second electrode are provided in an upper portion of the processing chamber so as to face the mounting table;
a gas supply unit for supplying the processing gas between the first electrode and the second electrode;
a radio frequency (RF) power supply unit connected to the second electrode and configured to apply RF power to the second electrode; and
a gas exhaust unit coupled to a lower portion of the processing chamber for exhausting the inside of the processing chamber to a vacuum level,wherein the first electrode includes a first plurality of linear members horizontally extending in parallel with each other, with the first plurality of linear members grounded, and the second electrode includes a second plurality of linear members horizontally extending in parallel with each other, with RF power applied to the second plurality of linear members,wherein the first plurality of linear members are arranged to face the second plurality of linear members, with the second plurality of linear members under the first plurality of linear members, and with both the first plurality of linear members and the second plurality of linear members in the upper portion of the processing chamber,wherein the first plurality of linear members is arranged in a one-to-one corresponding manner with the second plurality of linear members, andwherein the plasma is generated between each of the first plurality of linear members and the second plurality of linear members,wherein each of the first plurality of linear members is vertically opposite the corresponding one of the second plurality of linear members.
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Accused Products
Abstract
A plasma processing apparatus includes a first electrode and a second electrode so arranged in the upper portion of a processing chamber as to face a mounting table, a gas supply unit for supplying a processing gas between the first electrode and the second electrode, a RF power supply unit for applying a RF power between the first electrode and the second electrode for converting the process gas supplied between the electrodes into a plasma, and a gas exhaust unit for evacuating the inside of the processing chamber to a vacuum level from the lower portion of the processing chamber. Since the electron temperature in the plasma is low near a substrate on the mounting table, damage to the substrate caused by the plasma can be suppressed. In addition, since a metal can be used as a material for the processing chamber, the processing chamber can have good temperature controllability.
16 Citations
18 Claims
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1. A plasma processing apparatus having a processing chamber and a mounting table provided within the processing chamber for processing a substrate mounted on the mounting table by plasma of a processing gas, the apparatus comprising:
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a grounded first electrode and a second electrode under the first electrode, and wherein the first electrode and the second electrode are provided in an upper portion of the processing chamber so as to face the mounting table; a gas supply unit for supplying the processing gas between the first electrode and the second electrode; a radio frequency (RF) power supply unit connected to the second electrode and configured to apply RF power to the second electrode; and a gas exhaust unit coupled to a lower portion of the processing chamber for exhausting the inside of the processing chamber to a vacuum level, wherein the first electrode includes a first plurality of linear members horizontally extending in parallel with each other, with the first plurality of linear members grounded, and the second electrode includes a second plurality of linear members horizontally extending in parallel with each other, with RF power applied to the second plurality of linear members, wherein the first plurality of linear members are arranged to face the second plurality of linear members, with the second plurality of linear members under the first plurality of linear members, and with both the first plurality of linear members and the second plurality of linear members in the upper portion of the processing chamber, wherein the first plurality of linear members is arranged in a one-to-one corresponding manner with the second plurality of linear members, and wherein the plasma is generated between each of the first plurality of linear members and the second plurality of linear members, wherein each of the first plurality of linear members is vertically opposite the corresponding one of the second plurality of linear members. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification