SOI device with DTI and STI
First Claim
1. A method of forming an SOI structure comprising:
- providing a semiconductor on insulator (SOI) substrate having an SOI layer, an intermediate buried oxide (BOX) layer and a bottom substrate;
patterning the SOI layer to form first and second openings in the SOI layer;
extending the first openings into the bottom substrate;
enlarging the first openings within the bottom substrate;
filling the first and second openings with an insulator material to form deep trench isolations (DM) from the first openings and shallow trench isolations (STIs) from the second openings;
implanting in the bottom substrate between the DTIs to form wells; and
forming semiconductor devices in the SOI layer between the DTIs with each semiconductor device being separated from an adjacent semiconductor device by an STI.
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Accused Products
Abstract
A method of forming an SOI structure which includes providing a semiconductor on insulator (SOI) substrate having an SOI layer, an intermediate buried oxide (BOX) layer and a bottom substrate; patterning the SOI layer to form first and second openings in the SOI layer; extending the first openings into the bottom substrate; enlarging the first openings within the bottom substrate; filling the first and second openings with an insulator material to form deep trench isolations (DTIs) from the first openings and shallow trench isolations (STIs) from the second openings; implanting in the bottom substrate between the DTIs to form wells; and forming semiconductor devices in the SOI layer between the DTIs with each semiconductor device being separated from an adjacent semiconductor device by an STI.
7 Citations
14 Claims
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1. A method of forming an SOI structure comprising:
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providing a semiconductor on insulator (SOI) substrate having an SOI layer, an intermediate buried oxide (BOX) layer and a bottom substrate; patterning the SOI layer to form first and second openings in the SOI layer; extending the first openings into the bottom substrate; enlarging the first openings within the bottom substrate; filling the first and second openings with an insulator material to form deep trench isolations (DM) from the first openings and shallow trench isolations (STIs) from the second openings; implanting in the bottom substrate between the DTIs to form wells; and forming semiconductor devices in the SOI layer between the DTIs with each semiconductor device being separated from an adjacent semiconductor device by an STI. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification