Electrostatic capacitive pressure sensor

• US 8,656,787 B2
• Filed: 03/26/2010
• Issued: 02/25/2014
• Est. Priority Date: 03/30/2009
• Status: Active Grant

• Current Assignee: Azbil Corporation (Azbil BioVigilant Incorporated)
• Original Assignee: Azbil Corporation (Azbil BioVigilant Incorporated)
• Inventors: Ishihara, Takuya, Sashinami, Nobuo
• Primary Examiner(s): Caputo, Lisa
• Assistant Examiner(s): JENKINS, JERMAINE L
• Application Number:
  US13/260,169
• Publication Number:
  US 20120017691A1
• Time in Patent Office: 1,432 Days
• Field of Search: None
• US Class Current: 73/724
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G01L 9/0075 using a ceramic diaphragm, e.g. alumina, fused quartz, glass

Abstract

In an electrostatic capacitance pressure sensor provided with a pressure sensor chip of a diaphragm structure for detecting an electrostatic capacitance in accordance with a pressure of a medium to be measured, one face of a sensor diaphragm of the pressure sensor is a pressure introduction chamber side wherein the medium to be measured is introduced, and the other face is a capacitor chamber side wherein a capacitor portion is formed, where, in the sensor diaphragm, the rigidity is lower towards a center portion from a peripheral edge portion that is a boundary of diaphragm securing portions on the capacitor chamber side.

Claims

1. An electrostatic capacitive pressure sensor comprising a pressure sensor chip for detecting an electrostatic capacitance in accordance with the pressure of a medium being measured, wherein:

one face of a sensor diaphragm of the pressure sensor is a pressure introduction chamber side for introducing the medium to be measured, and the other face is a capacitor chamber side for forming a capacitor portion; and

the sensor diaphragm is of less rigidity toward the center portion from the peripheral edge portion that is a boundary with a diaphragm securing portion of the capacitor chamber side and the peripheral edge portion or the center portion of the sensor diaphragm flexes to the pressure introduction chamber side, and the other flexes to the capacitor chamber side, in accordance with a deposition of a component of a medium to be measured onto a surface of the sensor diaphragm that contacts the medium to be measured.

2. The electrostatic capacitive pressure sensor as set forth in claim 1, wherein:

in the sensor diaphragm, the thickness is thinner towards the center portion from a peripheral edge portion that is a boundary with a diaphragm securing portion on the capacitor chamber side.

3. The electrostatic capacitive pressure sensor as set forth in claim 2, wherein:

in the sensor diaphragm, the thickness is continuously thinner towards the center portion from a peripheral edge portion that is a boundary with a diaphragm securing portion on the capacitor chamber side.

4. The electrostatic capacitive pressure sensor as set forth in claim 2, wherein:

in the sensor diaphragm, the thickness is stepwise thinner towards the center portion from a peripheral edge portion that is a boundary with a diaphragm securing portion on the capacitor chamber side.

5. The electrostatic capacitive pressure sensor as set forth in claim 2, wherein:

the sensor diaphragm has a specific cavity in the pressure introduction chamber when viewed from the direction in which the medium to be measured is introduced.

6. The electrostatic capacitive pressure sensor as set forth in claim 5, wherein:

the sensor diaphragm has a cavity of a specific depth that is continuous to the center portion from a peripheral edge portion that is a boundary with a diaphragm securing portion on the capacitor chamber side; and

the width of the cavity increases stepwise towards the center portion from the peripheral edge portion.

7. The electrostatic capacitive pressure sensor as set forth in claim 1, wherein:

the peripheral edge portion of the sensor diaphragm that is the boundary with the diaphragm securing portion on the capacitor chamber side and the center portion of the sensor diaphragm are made from different materials; and

the material of the center portion is material with lower rigidity than the material of the peripheral edge portion.

8. The electrostatic capacitive pressure sensor as set forth in claim 1, wherein:

the peripheral edge portion of the sensor diaphragm that is the boundary with the diaphragm securing portion of the capacitor chamber side is structured from a single material and the center portion of the sensor diaphragm has a two-layer structure made from different materials, where the pressure introduction chamber side of the sensor diaphragm is made from the same material as the peripheral edge portion, and the capacitor chamber side of the sensor diaphragm is made from a material of lower rigidity than the material of the peripheral edge portion.

9. The electrostatic capacitive pressure sensor as set forth in claim 7, wherein:

the rigidity is determined by the Young'"'"'s modulus and the Poisson'"'"'s ratio of the material.

10. The electrostatic capacitive pressure sensor as set forth in claim 7, wherein:

the material of the peripheral edge of the sensor diaphragm is sapphire, and the material of the center portion is quartz glass.

11. The electrostatic capacitive pressure sensor as set forth in claim 7, wherein:

the sensor diaphragm has a specific cavity in the pressure introduction chamber when viewed from the direction in which the medium to be measured is introduced.