Battery pack overcharge protection system

• US 8,659,270 B2
• Filed: 10/29/2010
• Issued: 02/25/2014
• Est. Priority Date: 10/29/2010
• Status: Active Grant

• Current Assignee: Tesla Inc.
• Original Assignee: Tesla Motors Incorporated (Tesla Inc.)
• Inventors: Hermann, Weston Arthur, Kohn, Scott Ira, Cole, Philip David, Kalayjian, Nicholas Robert
• Primary Examiner(s): Muralidar, Richard V
• Assistant Examiner(s): Chung, Steve T
• Application Number:
  US12/916,050
• Publication Number:
  US 20120105015A1
• Time in Patent Office: 1,215 Days
• Field of Search: 320/118, 320/134, 320/162, 320/164, 320/163, 363/50, 363 5603- 5612, 361/86, 361/91.1, 361/91.5
• US Class Current: 320/164
• CPC Class Codes: H02J 7/00302 Overcharge protection
• CPC Class Codes: H02J 7/0031 using battery or load disconnect circuits H02J9/002 takes precedence

Abstract

An overcharge protection device (OPD) is provided that may be used alone, or in combination with conventional charging protection systems, to protect a battery pack from the occurrence of a potentially damaging overcharging event. The OPD is designed to be coupled to, and interposed between, the terminals of the battery pack. During normal system operation, the OPD has no effect on the operation of the charging system or the battery pack. During an overcharging event, if overcharging is not prevented by another conventional system, the OPD of the invention creates a short across the terminals of the battery pack causing a battery pack fuse designed to provide battery pack short circuit protection to blow, thereby interrupting the current path from the charger to the battery pack and preventing the battery pack from being overcharged.

Claims

1. A method of protecting a battery pack from overcharging during a battery pack charging cycle, wherein said battery pack is comprised of a plurality of individual batteries, wherein during said battery pack charging cycle a source of charging power is coupled to the battery pack and provides charging power to the battery pack, said method comprising the steps of:

electrically connecting a first lead of a doped silicon junction device to a first output terminal of said battery pack, wherein said doped silicon junction device is configured to break down and conduct current at a predetermined threshold voltage;

locating an electrical contactor between a junction of said first lead of said doped silicon junction device and said first output terminal of said battery pack and said source of charging power; and

electrically connecting a second lead of said doped silicon junction device to a second output terminal of said battery pack, wherein said second output terminal represents an oppositely charged terminal of said battery pack, and wherein when a voltage corresponding to said charging power during said battery pack charging cycle exceeds said predetermined threshold voltage said doped silicon junction device breaks down and creates a short between said first and second output terminals of said battery pack, wherein said short causes a fuse corresponding to said battery pack to blow and interrupt a current path between said battery pack and said source of charging power.

2. The method of claim 1, further comprising the step of locating a second electrical contactor between a junction of said second lead of said doped silicon junction device and said second output terminal of said battery pack and said source of charging power.

5. The method of claim 1, further comprising the steps of selecting an insulated gate bipolar transistor (IGBT) for said doped silicon junction device, wherein said IGBT passes current and shorts said battery pack when said voltage exceeds said predetermined threshold voltage.

6. The method of claim 5, further comprising the step of thermally coupling said IGBT to a heat sink to increase the I²t value of the IGBT.

7. The method of claim 1, further comprising the step of selecting a crowbar circuit with a trip voltage corresponding to said predetermined threshold voltage for said doped silicon junction device, wherein said crowbar circuit passes current and shorts said battery pack when said voltage exceeds said trip voltage.

18. The method of claim 1, further comprising the step of connecting a low pass RC circuit in series with said doped silicon junction device.

3. A method of protecting a battery pack from overcharging during a battery pack charging cycle, wherein said battery pack is comprised of a plurality of individual batteries, wherein during said battery pack charging cycle a source of charging power is coupled to the battery pack and provides charging power to the battery pack, said method comprising the steps of:

electrically connecting a first lead of a doped silicon junction device to a first output terminal of said battery pack, wherein said doped silicon junction device is configured to break down and conduct current at a predetermined threshold voltage;

locating an electrical contactor between a junction of said first lead of said doped silicon junction device and said first output terminal of said battery pack and said first output terminal of said battery pack; and

electrically connecting a second lead of said doped silicon junction device to a second output terminal of said battery pack, wherein said second output terminal represents an oppositely charged terminal of said battery pack, and wherein when a voltage corresponding to said charging power during said battery pack charging cycle exceeds said predetermined threshold voltage said doped silicon junction device breaks down and creates a short between said first and second output terminals of said battery pack, wherein said short causes a fuse corresponding to said battery pack to blow and interrupt a current path between said battery pack and said source of charging power.

4. The method of claim 3, further comprising the step of locating a second electrical contactor between a junction of said second lead of said doped silicon junction device and said second output terminal of said battery pack and said second output terminal of said battery pack.

19. The method of claim 3, further comprising the steps of selecting an insulated gate bipolar transistor (IGBT) for said doped silicon junction device, wherein said IGBT passes current and shorts said battery pack when said voltage exceeds said predetermined threshold voltage.

20. The method of claim 19, further comprising the step of thermally coupling said IGBT to a heat sink to increase the I²t value of the IGBT.

21. The method of claim 3, further comprising the step of selecting a crowbar circuit with a trip voltage corresponding to said predetermined threshold voltage for said doped silicon junction device, wherein said crowbar circuit passes current and shorts said battery pack when said voltage exceeds said trip voltage.

22. The method of claim 3, further comprising the step of connecting a low pass RC circuit in series with said doped silicon junction device.

8. A system that provides overcharge protection for a battery pack during a battery pack charging cycle, wherein during said battery pack charging cycle a source of charging power is coupled to the battery pack and provides charging power to the battery pack, the system comprising a doped silicon junction device electrically connected between a first output terminal and a second output terminal of the battery pack, said battery pack comprised of a plurality of individual batteries, wherein a first lead of said doped silicon junction device is electrically connected to said first output terminal and a second lead of said doped silicon junction device is electrically connected to said second output terminal, wherein said doped silicon junction device is electrically coupled to said first output terminal at a location between said source of charging power and a first terminal contactor, wherein said first terminal contactor corresponds to said source of charging power, wherein said doped silicon junction device is configured to break down and conduct current at a predetermined threshold voltage and create a short between said first and second output terminals if a charging voltage corresponding to said charging power exceeds said predetermined threshold voltage, and wherein said doped silicon junction device has a sufficiently large I²t to cause a fuse corresponding to the battery pack to blow and interrupt a current path between said battery pack and said source of charging power.

9. The system of claim 8, wherein said doped silicon junction device is electrically coupled to said second output terminal at a location between said source of charging power and a second terminal contactor, wherein said second terminal contactor corresponds to said source of charging power.

12. The system of claim 8, further comprised of an RC circuit electrically interposed between said doped silicon junction device and said first output terminal.

13. The system of claim 8, wherein said doped silicon junction device does not include a processor and does not include a secondary source of power separate from the battery pack.

14. The system of claim 8, wherein said doped silicon junction device is comprised of an insulated gate bipolar transistor (IGBT).

15. The system of claim 14, further comprising a heat sink in thermal contact with said IGBT.

16. The system of claim 8, wherein said doped silicon junction device is comprised of a crowbar circuit.

17. The system of claim 16, wherein said crowbar circuit is comprised of at least a zener diode and a silicon controlled rectifier.

10. A system that provides overcharge protection for a battery pack during a battery pack charging cycle, wherein during said battery pack charging cycle a source of charging power is coupled to the battery pack and provides charging power to the battery pack, the system comprising a doped silicon junction device electrically connected between a first output terminal and a second output terminal of the battery pack, said battery pack comprised of a plurality of individual batteries, wherein a first lead of said doped silicon junction device is electrically connected to said first output terminal and a second lead of said doped silicon junction device is electrically connected to said second output terminal, wherein said doped silicon junction device is electrically coupled to said first output terminal at a location between a first terminal contactor and said first output terminal, wherein said first terminal contactor corresponds to said source of charging power, wherein said doped silicon junction device is configured to break down and conduct current at a predetermined threshold voltage and create a short between said first and second output terminals if a charging voltage corresponding to said charging power exceeds said predetermined threshold voltage, and wherein said doped silicon junction device has a sufficiently large I²t to cause a fuse corresponding to the battery pack to blow and interrupt a current path between said battery pack and said source of charging power.

11. The system of claim 10, wherein said doped silicon junction device is electrically coupled to said second output terminal at a location between a second terminal contactor and said second output terminal, wherein said second terminal contactor corresponds to said source of charging power.

23. The system of claim 10, further comprised of an RC circuit electrically interposed between said doped silicon junction device and said first output terminal.

24. The system of claim 10, wherein said doped silicon junction device does not include a processor and does not include a secondary source of power separate from the battery pack.

25. The system of claim 10, wherein said doped silicon junction device is comprised of an insulated gate bipolar transistor (IGBT).

26. The system of claim 25, further comprising a heat sink in thermal contact with said IGBT.

27. The system of claim 10, wherein said doped silicon junction device is comprised of a crowbar circuit.

28. The system of claim 27, wherein said crowbar circuit is comprised of at least a zener diode and a silicon controlled rectifier.