Integrating a first contact structure in a gate last process
First Claim
Patent Images
1. A method comprising:
- providing a substrate;
forming a transistor that includes a gate dielectric layer disposed over the substrate and a metal gate disposed over the gate dielectric layer;
forming a dual contact structure that is coupled to a doped region of the transistor, wherein the forming the dual contact structure includes;
before forming the metal gate of the transistor, forming a first contact feature coupled to the doped region of the transistor, andafter forming the metal gate of the transistor, forming a second contact feature coupled to the first contact feature; and
forming a dummy dual contact structure in a first region of the substrate that is less dense than a second region of the substrate in which the transistor is disposed.
2 Assignments
0 Petitions
Accused Products
Abstract
A method is provided that includes providing a substrate; forming a transistor in the substrate, the transistor having a dummy gate; forming a dielectric layer over the substrate and transistor; forming a contact feature in the dielectric layer; and after forming the contact feature, replacing the dummy gate of the transistor with a metal gate. An exemplary contact feature is a dual contact.
14 Citations
11 Claims
-
1. A method comprising:
-
providing a substrate; forming a transistor that includes a gate dielectric layer disposed over the substrate and a metal gate disposed over the gate dielectric layer; forming a dual contact structure that is coupled to a doped region of the transistor, wherein the forming the dual contact structure includes; before forming the metal gate of the transistor, forming a first contact feature coupled to the doped region of the transistor, and after forming the metal gate of the transistor, forming a second contact feature coupled to the first contact feature; and forming a dummy dual contact structure in a first region of the substrate that is less dense than a second region of the substrate in which the transistor is disposed. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A method comprising:
-
providing a substrate having a first region and a second region, wherein the second region has a pattern density that is substantially less than a pattern density of the first region; forming a first transistor and a second transistor in the first region, wherein the first transistor and the second transistor each include a gate dielectric layer and a metal gate disposed over the gate dielectric layer; forming a dual contact structure in the first region between the first transistor and the second transistor, wherein the forming the dual contact structure includes; before forming the metal gate of the first transistor and the second transistor, forming a first contact feature coupled to a doped region of one of the first transistor and the second transistor, and after forming the metal gate of the first transistor and the second transistor, forming a second contact feature coupled to the first contact feature; and forming a dummy dual contact structure in the second region. - View Dependent Claims (9)
-
-
10. A method comprising:
-
providing a substrate having a first region and a second region, wherein the second region has a pattern density that is substantially less than a pattern density of the first region; forming a first transistor and a second transistor in the first region, wherein the first transistor and the second transistor each include a gate dielectric layer and a metal gate disposed over the gate dielectric layer; forming a dual contact structure in the first region between the first transistor and the second transistor, wherein the forming the dual contact structure includes; before forming the metal gate of the first transistor and the second transistor, forming a first contact feature coupled to a doped region of one of the first transistor and the second transistor, and after forming the metal gate of the first transistor and the second transistor, forming a second contact feature coupled to the first contact feature; and forming a dummy dual contact structure in the second region, wherein the forming the dummy dual contact structure includes; forming a first dummy contact feature; and forming a second dummy contact feature coupled to the second contact feature. - View Dependent Claims (11)
-
Specification