Method of producing semiconductor device and method of producing solid-state image pickup device

  • US 8,679,922 B2
  • Filed: 01/27/2012
  • Issued: 03/25/2014
  • Est. Priority Date: 02/09/2011
  • Status: Active Grant
First Claim
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1. A method of producing a semiconductor device having a semiconductor substrate and multiple insulating films including a first insulating film disposed on the semiconductor substrate, a second insulating film disposed on the first insulating film, a third insulating film disposed on the second insulating film, and a fourth insulating film disposed on the third insulating film and having an opening communicating among at least the second insulating film, the third insulating film, and the fourth insulating film, the method comprising:

  • forming a mask having an opening, for forming an opening in the multiple insulating films, above the semiconductor substrate on which a member to be formed into the first insulating film, a member to be formed into the second insulating film made of a material different from that of the member to be formed into the first insulating film, a member to be formed into the third insulating film, and a member to be formed into the fourth insulating film made of a material different from that of the member to be formed into the third insulating film are stacked in this order;

    continuously removing the member to be formed into the fourth insulating film at a portion corresponding to the opening of the mask and the member to be formed into the third insulating film at a portion corresponding to the opening of the mask by etching the member to be formed into the fourth insulating film and the member to be formed into the third insulating film using the mask under conditions that both the member to be formed into the fourth insulating film and the member to be formed into the third insulating film are etched;

    removing the member to be formed into the second insulating film, after the continuous removing, at a portion corresponding to the opening of the mask by etching the member to be formed into the second insulating film using the mask under conditions that the etching rate of the member to be formed into the second insulating film is higher than that of the member to be formed into the first insulating film; and

    removing the member to be formed into first insulating film at a portion corresponding to the opening of the mask by etching using the mask.

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