Technique for processing a substrate

• US 8,685,846 B2
• Filed: 01/28/2010
• Issued: 04/01/2014
• Est. Priority Date: 01/30/2009
• Status: Active Grant

• Current Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Original Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Inventors: Low, Russell J., Weaver, William T., Bateman, Nicholas P. T., Gupta, Atul
• Primary Examiner(s): Maldonado, Julio J
• Assistant Examiner(s): Movva, Amar
• Application Number:
  US12/695,729
• Publication Number:
  US 20100197125A1
• Time in Patent Office: 1,524 Days
• Field of Search: 438/514, 257/E21.346
• US Class Current: 438/514
• CPC Class Codes: H01J 2237/0458 movable, i.e. for changing between differently sized apertures
• CPC Class Codes: H01J 2237/31711 using mask
• CPC Class Codes: H01J 37/09 Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
• CPC Class Codes: H01J 37/3171 for ion implantation plasma immersion ion implantation H01J37/32412
• CPC Class Codes: H01L 21/266 using masks H01L21/26586 takes precedence
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

An improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate. The method may comprise ion implanting a substrate disposed downstream of the ion source with ions generated in an ion source; and disposing a first portion of a mask in front of the substrate to expose the first portion of the mask to the ions, the mask being supported by the first and second mask holders, the mask further comprising a second portion wound in the first mask holder.

Claims

1. A method for processing a substrate, the method comprising:

ion implanting a substrate disposed downstream of an ion source with ions generated in the ion source; and

disposing a first portion of a mask in front of the substrate to expose the first portion of the mask to the ions, the mask being supported by the first and second mask holders, the mask further comprising a second portion wound in the first mask holder.

2. The method according to claim 1, wherein the first and second mask holders have at least one degree of rotational freedom.

3. The method according to claim 1, further comprising:

spinning the first and second mask holders in a first direction to unwind the second portion of the mask and disposing the second portion of the mask in front of the substrate.

4. The method according to claim 3, further comprising:

spinning the first and second mask holders in a second direction opposite to the first direction.

5. The method according to claim 4, wherein the spinning the first and second mask holders in the second direction occurs after the spinning the first and second mask holders in the first direction.

6. The method according to claim 3, wherein the spinning the first and second mask holders in the first direction occurs during the ion implanting.

7. The method according to claim 5, wherein the spinning the first and second mask holders in the first direction and the spinning the first and second mask holders in the second direction occur during the ion implanting.

8. The method according to claim 3, wherein the spinning the first and second mask holders in the first direction occurs after the ion implanting.

9. The method according to claim 1, wherein the mask comprises metallic species.

10. The method according to claim 9, wherein the metallic species contains at least one of aluminum (Al), silver (Ag), gold (Au), platinum (Pt), copper (Cu), iron (Fe), nickel (Ni), zinc (Zn), tungsten (W), and lead (Pb).

11. The method according to claim 1, wherein the mask comprises non-metallic species.

12. The method according to claim 11, wherein the non-metallic species contains at least one of silicon (Si), polymer, graphite fiber, carbon fiber, and silicon dioxide.

13. The method according to claim 1, wherein the mask further comprises a coating containing at least one of silicon dioxide (SiO.sub.2), boron nitride (BN), silicon carbide (SiC), silicon nitride (SiN), carbon film, and silicon film.

14. The method according to claim 1, wherein the mask is a tape mask having a plurality of apertures.