Semiconductor light emitting device

• US 8,686,454 B2
• Filed: 10/22/2009
• Issued: 04/01/2014
• Est. Priority Date: 10/22/2008
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Choi, Pun Jae, Kim, Yu Seung, Lee, Jin Bock
• Primary Examiner(s): Page, Dale E
• Application Number:
  US13/125,256
• Publication Number:
  US 20120032218A1
• Time in Patent Office: 1,622 Days
• Field of Search: 257/98, 257/435, 257/E31.127
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.

Claims

1. A semiconductor light emitting device, comprising:

a conductive substrate;

a light emitting structure having a second semiconductor layer, an active layer, and a first semiconductor layer sequentially stacked;

a first electrode layer disposed between the conductive substrate and the light emitting structure, the first electrode layer extending toward an upper surface of the light emitting structure through contact holes to be in contact with an inside of the first semiconductor layer, the contact holes penetrating the second semiconductor layer and the active layer, and the first electrode layer extending toward a side surface of the light emitting structure through an electrical connection portion to be exposed outwardly of the light emitting structure; and

an insulating layer electrically separating the first electrode layer from the conductive substrate, the second semiconductor layer and the active layer, wherein;

a contact area between the contact holes and the first semiconductor layer is 0.615% to 15.68% of a total area of the upper surface of the light emitting structure, and

the first electrode layer has a substantially flat shape except for a region in which the contact holes are disposed.

2. The semiconductor light emitting device of claim 1, wherein the contact holes are uniformly arranged.

3. The semiconductor light emitting device of claim 1, wherein the number of the contact holes is 1 to 48,000.

4. The semiconductor light emitting device of claim 1, wherein the contact area between the first electrode layer and the first semiconductor layer is 6,150 μ

m² to 156,800 μ

m² per 1,000,000 μ

m² area of the upper surface of the semiconductor light emitting device.

5. The semiconductor light emitting device of claim 2, wherein a distance between central points of adjacent contact holes among the contact holes is 5 μ

m to 500 μ

m.

6. The semiconductor light emitting device of claim 1, wherein the contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of a total area of the upper surface of the light emitting structure.

7. The semiconductor light emitting device of claim 1, wherein the second electrode layer includes one selected from the group consisting of Ag, Al, Pt, Ni, Pt, Pd, Au, Ir and a transparent conductive oxide.

8. The semiconductor light emitting device of claim 1, wherein the conductive substrate includes one selected from the group consisting of Au, Ni, Al, Cu, W, Si, Se, and GaAs.