Display device and method for manufacturing the same
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming an oxide semiconductor layer over an insulating layer;
forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer;
forming an oxide insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, the oxide insulating layer being in contact with a part of the oxide semiconductor layer; and
forming an i-type region in the oxide semiconductor layer by heating the oxide insulating layer,wherein the i-type region is formed at least between a first n-type region and a second n-type region,wherein the first n-type region is in contact with the source electrode layer, andwherein the second n-type region is in contact with the drain electrode layer.
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Abstract
An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.
149 Citations
21 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer over an insulating layer; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer; forming an oxide insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, the oxide insulating layer being in contact with a part of the oxide semiconductor layer; and forming an i-type region in the oxide semiconductor layer by heating the oxide insulating layer, wherein the i-type region is formed at least between a first n-type region and a second n-type region, wherein the first n-type region is in contact with the source electrode layer, and wherein the second n-type region is in contact with the drain electrode layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer over an insulating layer; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer; forming an oxide insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, the oxide insulating layer being in contact with a part of the oxide semiconductor layer; and forming an i-type region in the oxide semiconductor layer by heating the oxide insulating layer, wherein the i-type region is formed at least between a first n-type region and a second n-type region, wherein the first n-type region is in contact with the source electrode layer, wherein the second n-type region is in contact with the drain electrode layer, and wherein oxygen is supplied from the oxide insulating layer to the oxide semiconductor layer when the oxide insulating layer is heated. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer over an insulating layer; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer; forming an oxide insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, the oxide insulating layer being in contact with a part of the oxide semiconductor layer; and forming an i-type region in the oxide semiconductor layer by heating the oxide insulating layer, wherein the i-type region is formed at least between a first n-type region and a second n-type region, wherein the first n-type region is in contact with the source electrode layer, wherein the second n-type region is in contact with the drain electrode layer, and wherein the i-type region is formed by diffusion of oxygen from the oxide insulating layer to the oxide semiconductor layer. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification