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Display device and method for manufacturing the same

  • US 8,698,970 B2
  • Filed: 07/11/2013
  • Issued: 04/15/2014
  • Est. Priority Date: 08/27/2009
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming an oxide semiconductor layer over an insulating layer;

    forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer;

    forming an oxide insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, the oxide insulating layer being in contact with a part of the oxide semiconductor layer; and

    forming an i-type region in the oxide semiconductor layer by heating the oxide insulating layer,wherein the i-type region is formed at least between a first n-type region and a second n-type region,wherein the first n-type region is in contact with the source electrode layer, andwherein the second n-type region is in contact with the drain electrode layer.

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