Light emitting devices having current reducing structures

  • US 8,704,240 B2
  • Filed: 04/04/2013
  • Issued: 04/22/2014
  • Est. Priority Date: 06/30/2004
  • Status: Active Grant
First Claim
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1. A light emitting device, comprising:

  • a semiconductor diode having first and second opposing semiconductor surfaces of opposite conductivity type;

    a non-transparent feature on the first semiconductor surface;

    a reduced conductivity region in the light emitting device that is aligned with the non-transparent feature, the reduced conductivity region and the non-transparent feature including surfaces that face one another; and

    a reflector between the surfaces of the non-transparent feature and the reduced conductivity region that face one another.

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