Spectrally efficient photodiode for backside illuminated sensor

  • US 8,704,277 B2
  • Filed: 01/18/2007
  • Issued: 04/22/2014
  • Est. Priority Date: 05/09/2006
  • Status: Active Grant
First Claim
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1. A backside illuminated sensor, comprising:

  • a semiconductor substrate having a front surface and a back surface;

    a plurality of pixels formed on the front surface of the semiconductor substrate, wherein the plurality of pixels includes a first, second, and third pixel disposed at the front surface of the semiconductor substrate;

    a dielectric layer disposed above the front surface of the semiconductor substrate;

    a plurality of array regions arranged according to the plurality of pixels, wherein the plurality of array regions includes a first, second, and third array; and

    a plurality of color filters formed over the back surface, each being aligned with one of the plurality of pixels, andwherein the first array extends a first depth in a direction of the back surface, the second array extends a second depth in the direction of the back surface, the third array extends a third depth in the direction of the back surface,wherein the second depth extends deeper in the direction of the back surface of the substrate than first depth and the third depth extends deeper in the direction of the back surface than the second depth.

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