Multi-zone gas distribution system for a treatment system

• US 8,715,455 B2
• Filed: 02/06/2007
• Issued: 05/06/2014
• Est. Priority Date: 02/06/2007
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Brcka, Jozef
• Primary Examiner(s): Lund, Jeffrie R
• Assistant Examiner(s): Chandra, Satish
• Application Number:
  US11/671,704
• Publication Number:
  US 20080185104A1
• Time in Patent Office: 2,646 Days
• Field of Search: 118/715, 156/345.33, 156/345.34, 156/345.29, 422/187
• US Class Current: 156/345.34
• CPC Class Codes: H01J 2237/2001 Maintaining constant desired temperature
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow

Abstract

A treatment system is described for exposing a substrate to various processes. Additionally, a gas distribution system is configured to be coupled to and utilized with the treatment system in order to distribute process material above the substrate is provided. The treatment system includes a process chamber, a radical generation system coupled to the process chamber, a gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a temperature controlled pedestal coupled to the vacuum chamber and configured to support the substrate. The gas distribution system is configured to efficiently transport radicals to the substrate and distribute the radicals above the substrate.

Claims

1. A treatment system comprising:

a process chamber, including a process space;

a radical generation system coupled to said process chamber and configured to receive process gas and produce radicals from said process gas;

a gas distribution system configured to receive and distribute a flow of said radicals within said process space, said gas distribution system comprising;

a common inlet coupled to an exit of said radical generation system and configured to receive the flow of said radicals,

an outlet coupled to said process chamber and having an area which corresponds to a single substrate to be processed in said process chamber, and

a dividing member coupled to the gas distribution system and having a first end positioned at said common inlet to define an annular inlet of radius r₁ and a central inlet of radius r₂, and having a second end connected at said outlet to define an annular outlet of radius r₃ and a central outlet of radius r₄ such that the dividing member separately diverts a portion of the flow of said radicals from said common inlet through one of said central inlet and said annular inlet to a first plenum and out one of said central outlet and said annular outlet to a first region of said area of the outlet, and separately diverts the remaining portion of the flow of said radicals from said common inlet through the other of said central inlet and said annular inlet and to a second plenum, which is isolated from the first plenum, and out the other of said central outlet and said annular outlet to a second region of said area of the outlet, wherein a position of the dividing member is set to a predetermined value r₂/r₁ and r₄/r₃ to provide a predetermined distribution of said radicals in each of the first region and the second region in said area of the outlet;

a pedestal coupled to said process chamber and configured to support a substrate in said process space of said process chamber and adjust the temperature of said substrate said pedestal having an area which corresponds to said area of the outlet; and

a vacuum pumping system coupled to said process chamber and configured to evacuate said process chamber.

2. The treatment system of claim 1, wherein said first region comprises a substantially central region above said substrate and said second region comprises a substantially peripheral region above said substrate.

3. The treatment system of claim 2, wherein said dividing member diverts a substantially inner portion of the flow of said radicals to said first region above said substrate, and wherein said dividing member diverts a substantially outer portion of the flow of said radicals to said second region above said substrate.

4. The treatment system of claim 2, wherein said dividing member diverts a substantially inner portion of the flow of said radicals to said second region above said substrate, and wherein said dividing member diverts a substantially outer portion of the flow of said radicals to said first region above said substrate.

5. The treatment system of claim 1, wherein said gas distribution system comprises a main body, and said dividing member partitions said main body into said first plenum as an inner plenum and said second plenum as an outer plenum.

6. The treatment system of claim 5, wherein said gas distribution system further comprises a gas distribution plate coupled to said main body at an outlet of said inner plenum and an outlet of said outer plenum, and wherein said gas distribution plate comprises one or more openings there through.

7. The treatment system of claim 6, wherein said gas distribution plate comprises a plurality of openings distributed substantially equally on said gas distribution plate.

8. The treatment system of claim 6, wherein said gas distribution plate comprises a plurality of openings distributed unequally on said gas distribution plate.

9. The system according to claim 8, wherein distribution of said radicals in the first region and the second region is further controlled based on a number and distribution of the plurality of openings in said gas distribution plate in each of the first region and the second region.

10. The treatment system of claim 6, wherein said gas distribution plate comprises an inner plate member coupled to said gas distribution system at an outlet of said inner plenum, and said gas distribution plate comprises an outer plate member coupled to said gas distribution system at an outlet of said outer plenum.

11. The treatment system of claim 6, wherein said main body, said dividing member, or said gas distribution plate, or a combination of two or more thereof are fabricated from silicon dioxide or carbon.

12. The treatment system of claim 1, wherein said pedestal comprises one or more heating elements, or one or more cooling elements, or a combination thereof, configured to control said temperature of said substrate.

13. The treatment system of claim 1, wherein said dividing member is positioned in said common inlet to provide substantially equal gas flow to said first and second regions.

14. The treatment system of claim 1, wherein said process chamber, said radical generation system, said gas distribution system, or said pedestal, or a combination of two or more thereof have a coating formed on a surface thereof.

15. The treatment system of claim 14, wherein said coating contains at least one column III element.

16. The treatment system of claim 14, wherein said coating contains at least one element selected from the group consisting of Al₂O₃, Sc₂O₃, Sc₂F₃, YF₃, La₂O₃, Y₂O₃, and DyO₃.

17. The treatment system of claim 1, wherein said dividing member is positioned in said common inlet to provide substantially equal gas flow to said first and second regions.

18. The treatment system of claim 1, further comprising:

a process gas supply system coupled to said radical generation system, and configured to supply said process gas to said radical generation system.

19. The treatment system of claim 18, wherein said process gas supply system is configured to supply one or more of H₂, O₂, N₂, F₂, NO, NO₂, N₂O, CO, CO₂, NH₃, NF₃, a fluorocarbon, a hydrocarbon, or a hydrofluorocarbon, or any combination of two or more thereof.

20. A gas distribution system configured to be coupled to a substrate processing system for processing a single substrate, comprising:

a main body having a common inlet configured to receive a flow of process gas;

an outlet configured to distribute said process gas in said processing system the outlet having an area which corresponds to a single substrate to be processed in said process chamber; and

a dividing member coupled to said gas distribution system and having a first end positioned at said common inlet to define an annular inlet of radius r₁ and a central inlet of radius r₂, and having a second end connected at said outlet to define an annular outlet of radius r₃ and a central outlet of radius r₄ such that the dividing member separately diverts a portion of the flow of said process gas from said common inlet through one of said central inlet and said annular inlet to a first plenum and out one of said central outlet and said annular outlet to a first region of said area of the outlet, and separately diverts the remaining portion of the flow of said process gas from said common inlet through the other of said central inlet and said annular inlet and to a second plenum, which is isolated from the first plenum, and out the other of said central outlet and said annular outlet to a second region of said area of the outlet, wherein a position of the dividing member is set to a predetermined value r₂/r₁ and r₄/r₃ to provide uniformity of the distribution of said process gas over the single substrate.

21. The gas distribution system of claim 20, wherein said first region comprises a substantially central region above said substrate and said second region comprises a substantially peripheral region above said substrate.

22. The gas distribution system of claim 21, wherein said dividing member diverts a substantially inner portion of the flow of said process gas to said first region above said substrate, and wherein said dividing member diverts a substantially outer portion of the flow of said process gas to said second region above said substrate.

23. The gas distribution system of claim 21, wherein said dividing member diverts a substantially inner portion of the flow of said process gas to said second region above said substrate, and wherein said dividing member diverts a substantially outer portion of the flow of said process gas to said first region above said substrate.

24. The gas distribution system of claim 20, wherein said gas distribution system comprises a main body, and said dividing member partitions said main body into an inner plenum and an outer plenum.

25. The gas distribution system of claim 24, wherein said gas distribution system further comprises a gas distribution plate coupled to said main body at an outlet of said inner plenum and said outer plenum, and wherein said gas distribution plate comprises one or more openings there through.