Semiconductor radio frequency switch with body contact

  • US 8,723,260 B1
  • Filed: 03/12/2010
  • Issued: 05/13/2014
  • Est. Priority Date: 03/12/2009
  • Status: Active Grant
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First Claim
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1. A semiconductor die comprising:

  • an insulating layer;

    a thin-film semiconductor device layer over the insulating layer;

    a first body-contacted radio frequency (RF) switch having one of an ON state and an OFF state, and a non-operating state and comprising a first plurality of body-contacted field effect transistor (FET) elements coupled in series, such that each body-contacted FET element comprises a source, a drain, and a body formed in at least a part of the thin-film semiconductor device layer, wherein each one of the first plurality of body-contacted FET elements are separated from one another in the thin-film semiconductor device layer by an insulating material; and

    control circuitry coupled to each one of the first plurality of body-contacted FET elements, wherein during the OFF state of the first body-contacted RF switch, the control circuitry provides each body a body bias signal, such that each body and each corresponding source are reverse biased and each body and each corresponding drain are reverse biased to provide reverse body biasing of each corresponding body-contacted FET element.

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