Method of manufacturing semiconductor device
First Claim
1. A method of manufacturing a semiconductor device, comprising:
- forming a gate stack on a substrate;
depositing a first dielectric layer and a second dielectric layer sequentially on the substrate and the gate stack; and
etching the second dielectric layer and the first dielectric layer sequentially with an etching gas containing helium to form a second spacer and a first spacer, respectively,wherein etching the second dielectric layer and the first dielectric layer comprises;
performing a main etching operation on the second dielectric layer to form the second spacer, with a remainder of the second dielectric layer left on the first dielectric layer;
performing an over etching operation to remove the remainder of the second dielectric layer; and
performing etching to remove exposed portions of the first dielectric layer on the substrate.
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Abstract
A method of manufacturing a semiconductor device is disclosed. The method may comprise: forming a gate stack on a substrate; depositing a first dielectric layer and a second dielectric layer sequentially on the substrate and the gate stack; and etching the second dielectric layer and the first dielectric layer sequentially with an etching gas containing helium to form a second spacer and a first spacer, respectively. According to the method disclosed herein, a dual-layer complex spacer configuration is achieved, and two etching operations where the etching gas comprises the helium gas are performed. As a result, it is possible to reduce damages to the substrate and also to reduce the process complexity. Further, it is possible to optimize a threshold voltage, effectively reduce an EOT, and enhance a gate control capability and a driving current.
4 Citations
18 Claims
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1. A method of manufacturing a semiconductor device, comprising:
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forming a gate stack on a substrate; depositing a first dielectric layer and a second dielectric layer sequentially on the substrate and the gate stack; and etching the second dielectric layer and the first dielectric layer sequentially with an etching gas containing helium to form a second spacer and a first spacer, respectively, wherein etching the second dielectric layer and the first dielectric layer comprises; performing a main etching operation on the second dielectric layer to form the second spacer, with a remainder of the second dielectric layer left on the first dielectric layer; performing an over etching operation to remove the remainder of the second dielectric layer; and performing etching to remove exposed portions of the first dielectric layer on the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 18)
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17. The method according to claim wherein the first dielectric layer is etched by a HF-based wet etching solution.
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