Method of manufacturing semiconductor device

  • US 8,728,948 B2
  • Filed: 09/05/2012
  • Issued: 05/20/2014
  • Est. Priority Date: 07/03/2012
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, comprising:

  • forming a gate stack on a substrate;

    depositing a first dielectric layer and a second dielectric layer sequentially on the substrate and the gate stack; and

    etching the second dielectric layer and the first dielectric layer sequentially with an etching gas containing helium to form a second spacer and a first spacer, respectively,wherein etching the second dielectric layer and the first dielectric layer comprises;

    performing a main etching operation on the second dielectric layer to form the second spacer, with a remainder of the second dielectric layer left on the first dielectric layer;

    performing an over etching operation to remove the remainder of the second dielectric layer; and

    performing etching to remove exposed portions of the first dielectric layer on the substrate.

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