Butted SOI junction isolation structures and devices and method of fabrication

• US 8,741,725 B2
• Filed: 11/10/2010
• Issued: 06/03/2014
• Est. Priority Date: 11/10/2010
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: International Business Machines Corporation
• Inventors: Johnson, Jeffrey B., Narasimha, Shreesh, Nayfeh, Hasan M., Ontalus, Viorel, Robison, Robert R.
• Primary Examiner(s): Weiss, Howard
• Assistant Examiner(s): TANG, SUIAN
• Application Number:
  US12/943,084
• Publication Number:
  US 20120112280A1
• Time in Patent Office: 1,301 Days
• Field of Search: 257/347, 257/400, 257/509, 257/349, 257/336, 257/E27.112, 257/E29.02, 257/E29.266, 257/E21.437, 257/254, 438/163, 438/222, 438/149, 438/282, 438/298, 438/479, 438/517, 438/910, 438/300
• US Class Current: 438/347
• CPC Class Codes: H01L 21/76237 introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 29/7824 with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors

Abstract

A structure, a FET, a method of making the structure and of making the FET. The structure including: a silicon layer on a buried oxide (BOX) layer of a silicon-on-insulator substrate; a trench in the silicon layer extending from a top surface of the silicon layer into the silicon layer, the trench not extending to the BOX layer, a doped region in the silicon layer between and abutting the BOX layer and a bottom of the trench, the first doped region doped to a first dopant concentration; a first epitaxial layer, doped to a second dopant concentration, in a bottom of the trench; a second epitaxial layer, doped to a third dopant concentration, on the first epitaxial layer in the trench; and wherein the third dopant concentration is greater than the first and second dopant concentrations and the first dopant concentration is greater than the second dopant concentration.

Claims

1. A method, comprising:

providing a silicon layer on a buried oxide layer of a silicon-on-insulator substrate;

forming a first gate electrode of a first field effect transistor on a top surface of a gate dielectric layer formed on a top surface of said silicon layer and forming a second gate of a second field effect transistor on said top surface of said gate dielectric layer;

etching a trench in said silicon layer between said first and second gate electrodes, said trench extending from a top surface of said silicon layer into said silicon layer, said trench not extending to said buried oxide layer;

ion implanting a dopant species into said silicon layer under a bottom of said trench to form a first doped region in said silicon layer, said first doped region doped to a first concentration;

performing a first epitaxial deposition to form a first epitaxial layer doped to a second concentration in said bottom of said trench, said first epitaxial layer partially filling said trench;

performing a second epitaxial deposition to form a second epitaxial layer doped to a third concentration on said first epitaxial layer in said trench; and

wherein said third concentration is greater than said first and second concentrations and said first concentration is greater than said second concentration.

2. The method of claim 1, wherein after said ion implanting said doped region, said doped region abuts said buried oxide layer.

3. The method of claim 1, including:

after said ion implanting said doped region and before forming said first epitaxial silicon layer, said doped region does not abut said buried oxide layer.

4. The method of claim 1, wherein:

(i) said doped region, said first epitaxial layer and said second epitaxial layer are all doped a same dopant type;

or

(ii) said doped region and said first epitaxial layer are doped a first dopant type and said second epitaxial layer is doped a second and opposite dopant type;

or

(iii) said doped region and said first epitaxial layer are doped a first dopant type and said second epitaxial layer is net doped zero or is intrinsic.

5. The method of claim 1, further including:

ion implanting a dopant species into an upper region of said second epitaxial layer to form an additional doped region doped to a fourth dopant concentration, said additional doped region extending from a top surface of said second epitaxial layer into said second epitaxial layer a distance less than the thickness of said second epitaxial layer, said fourth dopant concentration greater than said third dopant concentration.

6. The method of claim 5, wherein:

(i) said additional doped region, said first epitaxial layer and said second epitaxial layer are all doped a same dopant type;

or

(ii) said doped region, said additional doped region and said first epitaxial layer are doped a first dopant type and said second epitaxial layer is doped a second and opposite dopant type;

or

(iii) said doped region, said additional doped region and said first epitaxial layer are doped a first dopant type and said second epitaxial layer is net doped zero or is intrinsic.

7. The method of claim 5, further including:

before etching said trench in said silicon layer and after forming said gate dielectric layer and said first and second gate electrodes, ion implanting first source/drain extensions on opposite sides of said first gate electrode into said silicon layer and ion implanting second source/drain extensions on opposite sides of second gate electrode, said first source/drain extensions extending under said first gate electrode and separated by a first channel region of said silicon layer under said gate electrode, said second source/drain extensions extending under said second gate electrode and separated by a second channel region of said silicon layer, said first and said second source/drain extensions doped said first dopant type.

8. The method of claim 5, further including:

after performing said second epitaxial layer, ion-implanting a first source/drain of said first field effect transistor and a shared source/drain of said first and second field effect transistors and a second source/drain of said second field effect transistor into an upper region of said second epitaxial layer, said first, common and second source/drains doped to a fourth dopant concentration, said first, common and second source/drains doped said first dopant type, said first, common and second source/drains extending from a top surface of said second epitaxial layer into said second epitaxial layer a distance less than the thickness of said second epitaxial layer, said fourth dopant concentration greater than said third dopant concentration.

9. The method of claim 8, wherein said second epitaxial layer does not contribute any P-type dopant species to depletion layers of said first, said common and said second source/drains.

10. The method of claim 1, wherein after forming said second epitaxial layer and performing an anneal of greater than room temperature an electrically resistive channel is formed in a region of said first epitaxial layer, said electrically resistive channel physically connecting a first region of said silicon layer under said first gate electrode to a second region of said silicon laser under said second gate electrode.

11. The method of claim 5, wherein after forming said second epitaxial layer and performing an anneal of greater than room temperature an electrically resistive channel is formed in a region of said first epitaxial layer, said electrically resistive channel physically connecting a first region of said silicon layer under said first gate electrode to a second region of said silicon laser under said second gate electrode.

12. The method of claim 1, wherein said first epitaxial layer includes silicon and includes germanium.

13. The method of claim 1, wherein said first epitaxial layer includes silicon and includes carbon.

14. The method of claim 1, wherein-said second epitaxial layer includes silicon and excludes other group IV atoms.

15. The method of claim 1, wherein said second epitaxial layer includes silicon and includes germanium.

16. The method of claim 1, wherein said second epitaxial layer includes silicon and includes carbon.

17. The method of claim 5, wherein after forming said second epitaxial layer and performing an anneal of greater than room temperature an electrically resistive channel is formed in a region of said first epitaxial layer, said electrically resistive channel physically connecting a first region of said silicon layer under said first gate electrode to a second region of said silicon laser under said second gate electrode, and after said anneal when said first epitaxial layer is doped N-type while said electrically resistive channel is doped N-type it is depleted of electrons and behaves electrically as a P-type doped region and when said first epitaxial layer is doped P-type while said electrically resistive channel is doped P-type it is depleted of holes and behaves electrically as an N-type doped region.

18. The method of claim 1, wherein said first epitaxial layer includes silicon and excludes other group IV atoms.

19. The method of claim 1 further including:

before etching said trench in said silicon layer and after forming said gate dielectric layer and said first and second gate electrodes, ion implanting first source/drain extensions on opposite sides of said first gate electrode into said silicon layer and ion implanting second source/drain extensions on opposite sides of second gate electrode, said first source/drain extensions extending under said first gate electrode and separated by a first channel region of said silicon layer under said gate electrode, said second source/drain extensions extending under said second gate electrode and separated by a second channel region of said silicon layer, said first and said second source/drain extensions doped said first dopant type.

20. The method of claim 1, further including:

after performing said second epitaxial layer, ion-implanting a first source/drain of said first field effect transistor and a shared source/drain of said first and second field effect transistors and a second source/drain of said second field effect transistor into an upper region of said second epitaxial layer, said first, said common and said second source/drains doped to a fourth dopant concentration, said first, said common and said second source/drains doped said first dopant type, said first, said common and said second source/drains extending from a top surface of said second epitaxial layer into said second epitaxial layer a distance less than the thickness of said second epitaxial layer, said fourth dopant concentration greater than said third dopant concentration.

21. The method of claim 20, wherein said second epitaxial layer does not contribute any P-type dopant species to depletion layers of said first, said common and said second source/drains.

22. The method of claim 1, wherein after forming said second epitaxial layer and performing an anneal of greater than room temperature an electrically resistive channel is formed in a region of said first epitaxial layer, said electrically resistive channel physically connecting a first region of said silicon layer under said first gate electrode to a second region of said silicon laser under said second gate electrode, and after said anneal when said first epitaxial layer is doped N-type while said electrically resistive channel is doped N-type it is depleted of electrons and behaves electrically as a P-type doped region and when said first epitaxial layer is doped P-type while said electrically resistive channel is doped P-type it is depleted of holes and behaves electrically as an N-type doped region.