SOI switch enhancement

  • US 8,749,296 B2
  • Filed: 05/13/2013
  • Issued: 06/10/2014
  • Est. Priority Date: 09/11/2009
  • Status: Active Grant
First Claim
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1. A serially stacked shunt semiconductor on insulator (SOI) switch comprising:

  • a plurality of field effect transistor (FET) devices, wherein each FET device of the plurality of FET devices includes a gate contact, a drain contact, and a source contact, and such that the plurality of FET devices are coupled in series to form a chain having a first drain at a first end of the chain, a first source coupled to a second end of the chain, and wherein the gate contact of the FET device at the second end of the chain is a first gate contact;

    a plurality of gate biasing circuits coupled in series, wherein each one of the plurality of gate biasing circuits is coupled between a corresponding pair of gate contacts of the plurality of FET devices, and further wherein each one of the plurality of gate biasing circuits includes a resistor; and

    a plurality of gate speedup circuits, wherein each one of the plurality of gate speedup circuits is coupled across a corresponding gate biasing circuit of the plurality of gate biasing circuits.

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