Reading a cross point cell array
First Claim
1. A computer program product for reading a cross point cell array, the computer program product comprising a computer readable storage medium having program code embodied therewith, the program code executable by a processing circuit to perform a method comprising:
- voltage biasing the cross point cell array to determine a state of a target cell on a selected bit line;
generating a negative magnetic field for a selected write bit line corresponding to the target cell;
measuring a first current through a selected word line responsive to the negative magnetic field;
generating a positive magnetic field for the selected write bit line corresponding to the target cell;
measuring a second current through the selected word line responsive to the positive magnetic field; and
determining the state of the target cell based on the first current relative to the second current.
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Accused Products
Abstract
A mechanism is provided for reading a cross point cell array. Voltage biasing is applied to the cross point cell array to determine a state of a target cell on a selected bit line. A negative magnetic field is generated for a selected write bit line corresponding to the target cell. A first current is measured through a selected word line responsive to the negative magnetic field. A positive magnetic field is generated for the selected write bit line corresponding to the target cell. A second current is measured through the selected word line responsive to the positive magnetic field. The state of the target cell is determined based on the first current relative to the second current.
45 Citations
20 Claims
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1. A computer program product for reading a cross point cell array, the computer program product comprising a computer readable storage medium having program code embodied therewith, the program code executable by a processing circuit to perform a method comprising:
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voltage biasing the cross point cell array to determine a state of a target cell on a selected bit line; generating a negative magnetic field for a selected write bit line corresponding to the target cell; measuring a first current through a selected word line responsive to the negative magnetic field; generating a positive magnetic field for the selected write bit line corresponding to the target cell; measuring a second current through the selected word line responsive to the positive magnetic field; and determining the state of the target cell based on the first current relative to the second current. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A system for reading a cross point cell array, the system comprising:
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a processing circuit operating the cross point cell array, the processing circuit configured for; voltage biasing the cross point cell array to determine a state of a target cell on a selected bit line; generating a negative magnetic field for a selected write bit line corresponding to the target cell; measuring a first current through a selected word line responsive to the negative magnetic field; generating a positive magnetic field for the selected write bit line corresponding to the target cell; measuring a second current through the selected word line responsive to the positive magnetic field; and determining the state of the target cell based on the first current relative to the second current. - View Dependent Claims (12, 13, 14, 15)
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16. A method for reading a cross point cell array, the method comprising:
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voltage biasing the cross point cell array to determine a state of a target cell on a selected bit line; generating a negative magnetic field for a selected write bit line corresponding to the target cell; measuring a first current through a selected word line responsive to the negative magnetic field; generating a positive magnetic field for the selected write bit line corresponding to the target cell; measuring a second current through the selected word line responsive to the positive magnetic field; and determining the state of the target cell based on the first current relative to the second current. - View Dependent Claims (17, 18, 19, 20)
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Specification