Quantum dot ink composition for inkjet printing and electronic device using the same

• US 8,765,014 B2
• Filed: 04/25/2008
• Issued: 07/01/2014
• Est. Priority Date: 01/14/2008
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Cho, Kyung Sang, Cha, Tae Woon
• Primary Examiner(s): Koslow, Carol M
• Assistant Examiner(s): Hoban, Matthew E
• Application Number:
  US12/109,843
• Publication Number:
  US 20090314991A1
• Time in Patent Office: 2,258 Days
• Field of Search: 252/301.36, 252/301.4 S, 252/301.4 R, 252/301.6 S, 252/301.6 R, 106/31.89, 106/31.59, 106/31.15, 423/498
• US Class Current: 252/301.36
• CPC Class Codes: C09D 11/36 based on non-aqueous solvents
• CPC Class Codes: C09D 11/38 characterised by non-macromolecular additives other than solvents, pigments or dyes
• CPC Class Codes: H10K 50/11 characterised by the electroluminescent [EL] layers
• CPC Class Codes: H10K 71/135 using ink-jet printing
• CPC Class Codes: H10K 71/15 characterised by the solvent used
• CPC Class Codes: H10K 85/1135 Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
• CPC Class Codes: H10K 85/324 comprising aluminium, e.g. Alq3

Abstract

Disclosed herein is a quantum dot ink composition for inkjet printing. The quantum dot ink composition comprises a highly viscous polymeric additive. Quantum dots can be ejected by inkjet printing and the concentration of the quantum dots in the quantum dot ink composition can be freely controlled. In addition, the loading amount of the quantum dots can be reduced. Based on these advantages, the quantum dot ink composition can be used as a material for light-emitting layers of a variety of electronic devices. Also disclosed herein is an electronic device fabricated using the quantum dot ink composition.

Claims

1. An quantum dot ink composition for inkjet printing, comprising semiconducting quantum dots, a solvent and a compound represented by Formula 1 or 2:

2. The quantum dot ink composition of claim 1, wherein the composition comprises about 0.5 to about 20% by weight of the compound of Formula 1 or 2, about 0.01 to about 20% by weight of the quantum dots, and about 60 to about 95% by weight of the solvent, based on the total weight of the composition.

3. The quantum dot ink composition of claim 1, wherein the quantum dots are selected from the group consisting of Group II-VI compound semiconductor nanocrystals, Group III-V compound semiconductor nanocrystals, Group IV-VI compound semiconductor nanocrystals, Group IV compound semiconductor nanocrystals, and mixtures thereof.

4. The quantum dot ink composition of claim 3, wherein the Group II-VI compound semiconductor nanocrystals are selected from the group consisting of semiconductor nanocrystals of binary compounds, including CdSe, CdTe, ZnS, ZnSe and ZnTe, ternary compounds, including CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, CdZnS, CdZnSe and CdZnTe, and quaternary compounds, including CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe;

the Group III-V compound semiconductor nanocrystals are selected from the group consisting of semiconductor nanocrystals of binary compounds, including GaN, GaP, GaAs, GaSb, InP, InAs and InSb, ternary compounds, including GaNP, GaNAs, GaNSb, GaPAs, GaPSb, InNP, InNAs, InNSb, InPAs, InPSb and GaAlNP, and quaternary compounds, including GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb;

the Group IV-VI compound semiconductor nanocrystals are selected from the group consisting of semiconductor nanocrystals of binary compounds, including PbS, PbSe and PbTe, ternary compounds, including PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe and SnPbTe, and quaternary compounds, including SnPbSSe, SnPbSeTe and SnPbSTe; and

the Group IV compound semiconductor nanocrystals are selected from the group consisting of semiconductor nanocrystals of unary compounds, including Si and Ge, and binary compounds, including SiC and SiGe.

5. An electronic device comprising:

a substrate;

a hole injecting electrode;

a hole transport layer;

a quantum dot light-emitting layer;

where the quantum dot light-emitting layer comprises;

a compound represented by Formula 1 or 2;

6. The electronic device of claim 5, wherein the electronic device is a quantum dot film, a display device, a lighting device, a backlight unit, a color filter, a surface light-emitting device, an electrode, a magnetic memory, or a battery.