Method of manufacturing a semiconductor component and structure

• US 8,766,401 B2
• Filed: 10/01/2010
• Issued: 07/01/2014
• Est. Priority Date: 10/01/2010
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Inventors: Holland, Phillip, Liu, Rong, Sharma, Umesh, Liou, Der Min, Marreiro, David D., Shastri, Sudhama C.
• Primary Examiner(s): Parekh, Nitin
• Application Number:
  US12/896,416
• Publication Number:
  US 20120080803A1
• Time in Patent Office: 1,369 Days
• Field of Search: 257/531, 257/E23.168, 257/E23.175, 257/E21.022, 257/E21.575, 257/776, 336/200
• US Class Current: 257/531
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/53223 Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53252 Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor component and methods for manufacturing the semiconductor component that includes a three dimensional helically shaped common mode choke. In accordance with embodiments, a transient voltage suppression device may be coupled to the monolithically integrated common mode choke.

Claims

1. A semiconductor component, comprising:

a first electrically conductive structure having first and second ends and a body region between the first and second ends;

a second electrically conductive structure having first and second ends and a body region between the first and second ends, the second electrically conductive structure vertically spaced apart from the first electrically conductive structure, a first portion of the body region of the second electrically conductive structure over a first portion of the body region of the first electrically conductive structure, and the first end of the first electrically conductive structure laterally and vertically spaced apart from the first end of the second electrically conductive structure;

a first bond wire having first and second ends, wherein the first end of the first bond wire is electrically coupled to the first end of the first electrically conductive structure; and

a second bond wire having first and second ends, wherein the first end of the second bond wire is electrically coupled to the first end of the second electrically conductive structure, and wherein the first electrically conductive structure and the first bond wire are configured to form a portion of a first coil that generates flux of a first polarity and the second electrically conductive structure and the second bond wire are configured to form a first portion of a second coil that generates flux of a second polarity, the second polarity opposite to the first polarity.

2. The semiconductor component of claim 1, further including a third electrically conductive structure having first and second ends and a body region between the first and second ends, wherein a second end of the first bond wire is electrically coupled to the second end of the third electrically conductive structure, and wherein the second end of the third electrically conductive structure is laterally and vertically spaced apart from the second end of the second electrically conductive structure, wherein the third electrically conductive structure and the first bond wire are configured to form a second portion of the first coil.

3. The semiconductor component of claim 2, wherein a second portion of the body region of the second electrically conductive structure is over a second portion of the body region of the third electrically conductive structure.

4. The semiconductor component of claim 2, further including a fourth electrically conductive structure having first and second ends and a body region between the first and second ends, the fourth electrically conductive structure vertically spaced apart from the first electrically conductive structure and a second portion of the body region of the fourth electrically conductive structure over a second portion of the body region of the first electrically conductive structure, the second end of the third electrically conductive structure laterally between the second ends of the second and the fourth electrically conductive structures, and the second end of the second bond wire electrically coupled to the second end of the fourth electrically conductive structure, wherein the fourth electrically conductive structure and the second bond wire are configured to form a second portion of the second coil.

5. The semiconductor component of claim 4, further including:

a fifth electrically conductive structure having first and second ends and a body region between the first and second ends, the first end of the fifth electrically conductive structure between the first ends of the second and fourth electrically conductive structures, and the fifth electrically conductive structure laterally and vertically spaced apart from the second and fourth electrically conductive structures;

a third bond wire having first and second ends, wherein the first end of the third bond wire is electrically coupled to the first end of the fifth electrically conductive structure and the second end of the third bond wire is electrically coupled to the second end of the first electrically conductive structure, wherein the fifth electrically conductive structure and the third bond wire are configured to form a third portion of the first coil; and

a fourth bond wire having first and second ends, wherein the first end of the fourth bond wire is electrically coupled to the first end of the fourth electrically conductive structure, wherein the fourth electrically conductive structure and the fourth bond wire are configured to form a third portion of the second coil.

6. The semiconductor component of claim 5, wherein a first portion of the body region of the fourth electrically conductive structure is over a first portion of the body region of the fifth electrically conductive structure.

7. The semiconductor component of claim 5, further including:

a sixth electrically conductive structure having first and second ends and a body region between the first and second ends, the second end of the sixth electrically conductive structure between the second ends of the first and the fifth electrically conductive structures and the second end of the fourth bond wire electrically coupled to the second end of the sixth electrically conductive structure, wherein the sixth electrically conductive structure and the fourth bond wire are configured to form a fourth portion of the second coil;

a fifth bond wire having first and second ends, the second end of the fifth bond wire electrically coupled to the second end of the fifth electrically conductive structure, wherein the fifth electrically conductive structure and the fifth bond wire are configured to form a fourth portion of the first coil;

a seventh electrically conductive structure having first and second ends, the first end of the seventh electrically conductive structure laterally between the first ends of the fourth and sixth electrically conductive structures, the first end of the fifth bond wire electrically coupled to the first end of the seventh electrically conductive structure, wherein the seventh electrically conductive structure and the fifth bond wire are configured to form a fifth portion of the first coil;

a sixth bond wire having first and second ends, the first end electrically coupled to the first end of the sixth electrically conductive structure, the sixth electrically conductive structure and the sixth bond wire configured to form a fifth portion of the second coil;

an eighth electrically conductive structure having first and second ends, the second end laterally between the second ends of the fifth and seventh electrically conductive structures, the second end of the sixth bond wire electrically coupled to the second end of the eighth electrically conductive structure, the eighth electrically conductive structure and the sixth bond wire configured to form a sixth portion of the second coil;

a seventh bond wire having first and second ends, the first end electrically coupled to the second end of the seventh electrically conductive structure, the seventh electrically conductive structure and the seventh bond wire configured to form a sixth portion of the first coil; and

an eighth bond wire having first and second ends, the second end electrically coupled to the second end of the second electrically conductive structure.

8. The semiconductor component of claim 7, wherein the first, third, fifth, and eighth electrically conductive structures comprise electrically conductive strips formed from a first common metallization system and the second, fourth, sixth, and seventh electrically conductive structures comprise electrically conductive strips formed from a second common metallization system.

9. The semiconductor component of claim 8, further including first and second contacts, wherein the first end of the eighth bond wire is electrically coupled to the first contact and the first end of the fifth bond wire is electrically coupled to the second contact, and wherein the first end of the eighth electrically conductive structure serves as a first terminal, the first contact serves as a second terminal, the second contact serves as a third terminal, and the first end of the sixth electrically conductive structure serves as a fourth terminal.

10. The semiconductor component of claim 7, wherein a second portion of the body region of the sixth electrically conductive structure is over a second portion of the body region of the fifth electrically conductive structure.

11. The semiconductor component of claim 7, wherein a first portion of the body region of the seventh electrically conductive structure is over a first portion of the body region of the third electrically conductive structure.

12. The semiconductor component of claim 7, wherein a second portion of the body region of the seventh electrically conductive structure is over a portion of the body region of the eighth electrically conductive structure.

13. A semiconductor component, comprising:

a first set of electrically conductive strips, wherein each electrically conductive strip of the first set of electrically conductive strips has a body region and first and second ends, and wherein the first set of electrically conductive strips is in a first plane;

a second set of electrically conductive strips, wherein each electrically conductive strip of the second set of electrically conductive strips has a body region and first and second ends, and wherein the second set of electrically conductive strips is in a second plane, the second plane different from the first plane, and wherein a first end of a first electrically conductive strip of the second set of electrically conductive strips is laterally positioned between the first ends of first and second electrically conductive strips of the first set of electrically conductive strips;

a first bond wire coupled between the first end of the second electrically conductive strip of the first set of electrically conductive strips and the second end of the first electrically conductive strip of the first set of electrically conductive strips, wherein the first and second electrically conductive strips of the first set of electrically conductive strips and the first bond wire are configured to form a portion of a first coil that generates flux of a first polarity and the second set of electrically conductive strips are configured to form a first portion of a second coil that generates flux of a second polarity that is opposite to the first polarity.

14. The semiconductor component of claim 13, wherein the first set of electrically conductive strips further includes a third electrically conductive strip and the second set of electrically conductive strips further includes second and third electrically conductive strips.

15. The semiconductor component of claim 14, further including:

a second bond wire coupled between the first end of the first electrically conductive strip of the first set of electrically conductive strips and the second end of the third electrically conductive strip of the first set of electrically conductive strips;

a third bond wire coupled between the first end of the first electrically conductive strip of the second set of electrically conductive strips and the second end of the third electrically conductive strip of the second set of electrically conductive strips; and

a fourth bond wire coupled between the first end of the first electrically conductive strip of the second set of electrically conductive strips and the second end of the second electrically conductive strip of the second set of electrically conductive strips.

16. The semiconductor component of claim 14, wherein the first set of electrically conductive strips further includes a fourth electrically conductive strip and the second set of electrically conductive strips further includes a fourth electrically conductive strip.

17. The semiconductor component of claim 16, further including:

first and second contacts;

a fifth bond wire coupled between the first contact and the second end of the third electrically conductive strip of the second set of electrically conductive strips;

a sixth bond wire coupled between the first end of the third electrically conductive strip of the first set of electrically conductive strips and the first end of the fourth electrically conductive strip of the first set of electrically conductive strips;

a seventh bond wire coupled between the first end of the second electrically conductive strip of the second set of electrically conductive strips and the second end of the fourth electrically conductive strip of the second set of electrically conductive strips; and

an eighth bond wire coupled between the second contact and the second end of the fourth electrically conductive strip of the first set of electrically conductive strips.

18. A semiconductor component, comprising:

a semiconductor material having a major surface;

a first dielectric structure formed over the semiconductor material;

a first metallization system formed over the first dielectric structure, the first metallization system comprising;

a first electrically conductive strip having a body region and first and second ends; and

a second electrically conductive strip having a body region and first and second ends;

a second dielectric structure formed over the first metallization system; and

a second metallization system formed over the second dielectric structure, the second metallization system comprising;

a third electrically conductive strip having a body region and first and second ends;

a fourth electrically conductive strip having a body region and first and second ends;

first and second contacts in contact with the first and second ends of the first electrically conductive strip, respectively;

third and fourth contacts in contact with the first and second ends of the second electrically conductive strip, respectively;

fifth and sixth contacts in contact with the first and second ends of the third electrically conductive strip, respectively;

seventh and eighth contacts in contact with the first and second ends of the fourth electrically conductive strip, respectively;

a first bond wire coupled to the first contact;

a second bond wire coupled between the fifth and eighth contacts;

a third bond wire coupled between the second and third contacts; and

a fourth bond wire coupled to the seventh contact, wherein the first metallization system and the first and third bond wires are configured to form a portion of a first coil that generates flux of a first polarity and the second metallization system and the second and fourth bond wires are configured to form a portion of a second coil that generates flux of a second polarity, the second polarity opposite the first polarity.

19. The semiconductor component of claim 18, wherein a first portion of the third electrically conductive strip overlies a first portion of the first electrically conductive strip, a first portion of the fourth electrically conductive strip overlies a first portion of the second electrically conductive strip, and a second portion of the fourth electrically conductive strip overlies a second portion of the first electrically conductive strip.

20. The semiconductor component of claim 18, wherein the first metallization system further includes:

a fifth electrically conductive strip having a body region and first and second ends; and

a sixth electrically conductive strip having a body region and first and second ends; and

wherein the second metallization system further includes;

a seventh electrically conductive strip having a body region and first and second ends; and

an eighth electrically conductive strip having a body region and first and second ends.

21. The semiconductor component of claim 20, wherein the first, second, third, fourth, fifth, sixth, seventh, and eighth contacts are laterally spaced apart from one another.

22. The semiconductor component of claim 20, wherein a second portion of the third electrically conductive strip overlies a portion of the sixth electrically conductive strip, a first portion of the seventh electrically conductive strip overlies a first portion of the fifth electrically conductive strip, a second portion of the seventh electrically conductive strip overlies a second portion of the second electrically conductive strip, and a portion of the eighth electrically conductive strip overlies a second portion of the fifth electrically conductive strip.