LED with surface roughening

• US 8,772,792 B2
• Filed: 08/23/2013
• Issued: 07/08/2014
• Est. Priority Date: 01/24/2005
• Status: Active Grant

• Current Assignee: CREE Led Incorporated (Smart Global Holdings Incorporated)
• Original Assignee: CREE Incorporated (Wolfspeed, Inc.)
• Inventors: DenBaars, Steven P., Nakamura, Shuji, Batres, Max
• Primary Examiner(s): Huynh, Andy
• Application Number:
  US13/974,505
• Publication Number:
  US 20130341663A1
• Time in Patent Office: 319 Days
• Field of Search: 257/79, 257/98, 257/99, 257/E33.068, 257/E33.074
• US Class Current: 257/79
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a roughened emitting-side surface to further enhance light extraction.

Claims

1. A light emitting diode (LED) comprising:

a first layer of first conductivity type having an associated first contact;

a second layer of second conductivity type having an associated second contact;

an active region between the first and second layers; and

a layer comprising transparent conductive material between the first layer and the first contact and extending on the first layer beyond the first contact, the layer comprising transparent material having a first face adjacent the first layer and a second face remote from the first layer, the second face being smooth beneath the first contact and at least a portion of the second face being rough beyond the first contact.

2. The LED of claim 1 wherein the transparent conductive material comprises a transparent conductive oxide.

3. The LED of claim 2 wherein the transparent conductive oxide comprises ZnO, In₂O₃ or Indium Tin Oxide (ITO).

4. The LED of claim 1 wherein the second contact comprises reflective material.

5. The LED of claim 1 wherein the first conductivity type is p-type and the second conductivity type is n-type.

6. The LED of claim 5 further comprising a semiconductor substrate on the second layer remote from the active region.

7. The LED of claim 1 wherein the first conductivity type is n-type and the second conductivity type is p-type.

8. The LED of claim 7 further comprising a submount on the second layer remote from the active region.

9. The LED of claim 1 wherein the first layer, second layer and active region comprise Group III nitride materials.

10. The LED of claim 1 wherein the first and second contacts are laterally arranged on a same side of the LED.

11. A light emitting diode (LED) comprising:

a first layer of first conductivity type having an associated first contact;

a second layer of second conductivity type having an associated second contact;

an active region between the first and second layers; and

a layer comprising transparent conductive material between the first layer and the first contact and extending on the first layer beyond the first contact, the layer comprising transparent material having a first face adjacent the first layer and a second face remote from the first layer, the first contact having a first face adjacent the first layer and a second face remote from the first layer, wherein the second face of the layer comprising transparent conductive material extends further away from the first layer than the first face of the first contact.

12. The LED of claim 11 wherein the transparent conductive material comprises a transparent conductive oxide.

13. The LED of claim 12 wherein the transparent conductive oxide comprises ZnO, In₂O₃ or Indium Tin Oxide (ITO).

14. The LED of claim 11 wherein the second contact comprises reflective material.

15. The LED of claim 11 wherein the first conductivity type is p-type and the second conductivity type is n-type.

16. The LED of claim 15 further comprising a semiconductor substrate on the second layer remote from the active region.

17. The LED of claim 11 wherein the first conductivity type is n-type and the second conductivity type is p-type.

18. The LED of claim 17 further comprising a submount on the second layer remote from the active region.

19. The LED of claim 11 wherein the first layer, second layer and active region comprise Group III nitride materials.

20. The LED of claim 11 wherein the first and second contacts are laterally arranged on a same side of the LED.

21. The LED of claim 11 wherein the second face of the layer comprising transparent conductive material is smooth beneath the first contact and at least a portion of the second face of the layer comprising transparent conductive material is rough beyond the first contact.