Semiconductor component arrangement comprising a trench transistor

• US 8,779,506 B2
• Filed: 01/10/2011
• Issued: 07/15/2014
• Est. Priority Date: 03/07/2006
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Zundel, Markus, Hirler, Franz, Krischke, Norbert
• Primary Examiner(s): NGUYEN, THANH T
• Application Number:
  US12/987,852
• Publication Number:
  US 20110163366A1
• Time in Patent Office: 1,282 Days
• Field of Search: 257/330, 257301-302
• US Class Current: 257/330
• CPC Class Codes: H01L 21/02233 of the semiconductor substrate or a semiconductor layer
• CPC Class Codes: H01L 21/02255 formation by thermal treatment H01L21/02252 takes precedence; after treatment of an insulating film H01L21/3105 and subgroups
• CPC Class Codes: H01L 21/32105 Oxidation of silicon-containing layers
• CPC Class Codes: H01L 21/743 Making of internal connections, substrate contacts
• CPC Class Codes: H01L 21/823437 with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 27/0733 in combination with capacitors only
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/0865 Disposition
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/66704 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/66712 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H01L 29/7804 : the other device being a pn-junction diode
• CPC Class Codes: H01L 29/7809 : having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
• CPC Class Codes: H01L 29/7811 : with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 : with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/7816 : Lateral DMOS transistors, i.e. LDMOS transistors
• CPC Class Codes: H01L 29/7823 : with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7825 : with trench gate electrode trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/945 : Trench capacitors

Abstract

Disclosed is a semiconductor component arrangement and a method for producing a semiconductor component arrangement. The method comprises producing a trench transistor structure with at least one trench disposed in the semiconductor body and with at least an gate electrode disposed in the at least one trench. An electrode structure is disposed in at least one further trench and comprises at least one electrode. The at least one trench of the transistor structure and the at least one further trench are produced by common process steps. Furthermore, the at least one electrode of the electrode structure and the gate electrode are produced by common process steps.

Claims

1. A semiconductor component arrangement comprising:

a semiconductor body having a first side and a second side;

a trench transistor structure integrated in the semi-conductor body, the trench transistor structure comprising at least one trench and at least one gate electrode positioned in said at least one trench;

at least one further trench, at least one electrode structure disposed in the at least one further trench, the at least one electrode structure comprising at least one electrode, wherein at least one section of the at least one electrode has the same geometrical basic structure as the at least one gate electrode,

wherein the at least one electrode of the electrode structure is a capacitor electrode of a capacitor structure, and

wherein the trench transistor structure has a cell structure comprising a multiplicity of identically constructed transistor cells each having a gate electrode arranged in a transistor trench,

wherein each of the transistor cells has a source region and a body region with the body region being doped complementarily to the source region,

wherein the source regions and the body regions of the transistor cells are connected to a common source electrode, and

wherein the transistor cells have a common drain zone.

2. The semiconductor component arrangement of claim 1, wherein the at least one electrode of the electrode structure has an electrode section arranged in the at least one further trench, wherein this electrode section and the at least one gate electrode have the same geometrical basic structure.

3. The semiconductor component of claim 2, wherein the electrode section and the at least one gate electrode have the same geometrical basic structure in a vertical section plane.

4. The semiconductor component of claim 3, wherein the at least one electrode of the electrode structure has a polygonal shape with a length and a width in horizontal plane, the length of the capacitor trenches being at least 10 times their width.

5. The semiconductor component of claim 1, wherein the at least one gate electrode is longitudinal electrode.

6. The semiconductor component of claim 1, wherein the at least one electrode of the electrode structure is longitudinal electrode.

7. The semiconductor component of claim 6, wherein the at least one electrode of the electrode structure has a polygonal shape with a length and a width in horizontal plane, the length of the capacitor trenches being at least 10 times of their width.

8. The semiconductor component of claim 1, wherein the at least one electrode of the electrode structure has a polygonal shape with a length and a width in horizontal plane, the length of the capacitor trenches being smaller than 10 times of their width.

9. The semiconductor component of claim 1, wherein the at least one electrode of the electrode structure has a square geometry, a hexagonal geometry, an octagonal geometry, or a circular geometry in a horizontal plane.

10. The semiconductor component of claim 1, further comprising an insulation layer, wherein the insulation layer comprises a layer stack having at least two layers composed of an insulation material.