High frequency switch

• US 8,779,840 B2
• Filed: 01/20/2012
• Issued: 07/15/2014
• Est. Priority Date: 12/20/2010
• Status: Active Grant

• Current Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Sugiura, Tsuyoshi, Otobe, Eiichiro, Tanji, Koki, Otani, Norihisa
• Primary Examiner(s): Nguyen, Hai L
• Application Number:
  US13/355,292
• Publication Number:
  US 20120154017A1
• Time in Patent Office: 907 Days
• Field of Search: 327/427, 327/436, 327/365
• US Class Current: 327/427
• CPC Class Codes: H03K 17/693 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors logic circuits H03K19/00; code converters H03M5/00, H03M7/00

Abstract

There is provided a high frequency switch capable of suppressing deterioration in distortion characteristics. The high frequency switch includes: a common port outputting a transmission signal to an antenna; a plurality of transmission ports each having the transmission signal input thereto; and a plurality of switching units each connected between the plurality of transmission ports and the common port to conduct or block the transmission signal from each of the transmission ports to the common port, wherein each of the switching units has one or more metal oxide semiconductor field effect transistors (MOSFETs) formed on a silicon substrate, and a capacitor connected between a body terminal of a MOSFET connected to the common port among the MOSFETs and a terminal of the MOSFET connected to the common port.

Claims

1. A high frequency switch comprising:

a common port outputting a transmission signal to an antenna;

a plurality of transmission ports each having the transmission signal input thereto; and

a plurality of switching units each connected between the plurality of transmission ports and the common port to conduct or block the transmission signal from each of the transmission ports to the common port,

wherein each of the switching units has one or more metal oxide semiconductor field effect transistors (MOSFETs) formed on a silicon substrate, and a capacitor connected between a body terminal of a MOSFET connected to the common port among the MOSFETs and a terminal of the MOSFET connected to the common port.

2. The high frequency switch of claim 1, wherein each of the switching units is configured by connecting the MOSFETs in series with each other and having the capacitor connected to the MOSFET connected to the antenna among the MOSFETs.

3. The high frequency switch of claim 2, wherein the silicon substrate is a silicon on insulator (SOI)substrate.

4. The high frequency switch of claim 2, wherein the silicon substrate is a bulk substrate.

5. The high frequency switch of claim 1, wherein each body terminal of the one or more MOSFETs is supplied with a substrate potential through one or more resistors.

6. The high frequency switch of claim 5, wherein the silicon substrate is a silicon on insulator (SOI)substrate.

7. The high frequency switch claim 5, wherein the silicon substrate is a bulk substrate.

8. The high frequency switch of claim 1, wherein the silicon substrate is a silicon on insulator (SOI)substrate.

9. The high frequency switch of claim 1, wherein the silicon substrate is a bulk substrate.