High dielectric constant transition metal oxide materials
First Claim
1. A dielectric material for an integrated circuit consisting essentially of a transition metal oxide layer with a non-metal dopant in a tetragonal crystal structure, wherein the dielectric material has a dielectric constant at least 30% higher than the transition metal oxide without the dopant, wherein the metal in the transition metal oxide consists essentially of hafnium or zirconium, wherein the dopant is nitrogen and wherein the dielectric material comprises between about 1 atomic % and 20 atomic % nitrogen.
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Abstract
A transition metal oxide dielectric material is doped with a non-metal in order to enhance the electrical properties of the metal oxide. In a preferred embodiment, a transition metal oxide is deposited over a bottom electrode and implanted with a dopant. In a preferred embodiment, the metal oxide is hafnium oxide or zirconium oxide and the dopant is nitrogen. The dopant can convert the crystal structure of the hafnium oxide or zirconium oxide to a tetragonal structure and increase the dielectric constant of the metal oxide.
54 Citations
17 Claims
- 1. A dielectric material for an integrated circuit consisting essentially of a transition metal oxide layer with a non-metal dopant in a tetragonal crystal structure, wherein the dielectric material has a dielectric constant at least 30% higher than the transition metal oxide without the dopant, wherein the metal in the transition metal oxide consists essentially of hafnium or zirconium, wherein the dopant is nitrogen and wherein the dielectric material comprises between about 1 atomic % and 20 atomic % nitrogen.
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12. A dielectric material for an integrated circuit consisting essentially of a hafnium oxide or zirconium oxide layer with a nitrogen dopant in a predominantly tetragonal crystal structure,
wherein the dielectric material has a dielectric constant at least 30% higher than the hafnium oxide or zirconium oxide without the nitrogen dopant, and wherein the dielectric material comprises between about 1 atomic % and 20 atomic % nitrogen.
Specification