Adaptive voltage range management in non-volatile memory
First Claim
1. An electronic memory device controller, comprising:
- a voltage range module configured to;
compress a voltage range for a memory element of an electronic memory device from a first voltage range to a compressed voltage range, the memory element comprising at least a first state and a second state; and
implement different adjustments to an abode characteristic of the first state and an abode characteristic of the second state, in response to a trigger event.
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Abstract
A method for adaptive voltage range management in non-volatile memory is described. The method includes establishing an adaptive voltage range for a memory element of an electronic memory device. The memory element includes at least two states. The adaptive voltage range comprises a lower state and an upper state. The method also includes establishing an adjustment process to implement a first adjustment of an abode characteristic of a first state and to implement a second adjustment of an abode characteristic of a second state in the adaptive voltage range in response to a trigger event, wherein the first adjustment of an abode characteristic of the first state is different from the second adjustment of an abode characteristic of the second state.
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Citations
20 Claims
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1. An electronic memory device controller, comprising:
a voltage range module configured to; compress a voltage range for a memory element of an electronic memory device from a first voltage range to a compressed voltage range, the memory element comprising at least a first state and a second state; and implement different adjustments to an abode characteristic of the first state and an abode characteristic of the second state, in response to a trigger event. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method comprising:
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operating a memory element of an electronic memory device in an adaptive voltage range, wherein the memory element comprises at least a lower state and an upper state; implementing a first adjustment of an abode characteristic of the lower state in response to a trigger event; and implementing a second adjustment of an abode characteristic of the upper state in response to the trigger event, wherein the first adjustment is different from the second adjustment. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. An electronic memory device controller, the controller comprising:
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means for establishing an adaptive voltage range for a memory element of an electronic memory device, the memory element comprising at least two states; and means for making a first adjustment of an abode characteristic of a first state and making a different adjustment of an abode characteristic of a second state in the adaptive voltage range in response to a trigger event. - View Dependent Claims (19)
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20. A method, comprising:
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configuring a memory element of an electronic memory device with a first state and a second state; configuring a voltage range module to reduce a first voltage range of the memory element to a second, compressed voltage range; and adjusting an abode characteristic of the first state and an abode characteristic of the second state in response to a trigger event.
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Specification