Back-end-of-line metal-oxide-semiconductor varactors
First Claim
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1. A method of fabricating a device structure, the method comprising:
- forming a first conductive layer on a dielectric layer;
forming a semiconductor layer on the first conductive layer, the semiconductor layer comprised of a silicon-containing semiconductor material in an amorphous state or a polycrystalline state;
forming an insulator layer on the semiconductor layer;
forming a second conductive layer on the insulator layer;
patterning the second conductive layer, the insulator layer, and the semiconductor layer, to respectively form a first electrode, an electrode insulator, and a semiconductor body, the electrical insulator separating the first electrode from the semiconductor body;
after the first electrode, the semiconductor body, and the electrical insulator are formed, patterning the first conductive layer to form a second electrode; and
forming a source region and a drain region in the semiconductor body.
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Abstract
Device structures, design structures, and fabrication methods for a varactor. The device structure includes a first electrode formed on a dielectric layer, and a semiconductor body formed on the first electrode. The semiconductor body is comprised of a silicon-containing semiconductor material in an amorphous state or a polycrystalline state. The device structure further includes an electrode insulator formed on the semiconductor body and a second electrode formed on the electrode insulator.
26 Citations
9 Claims
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1. A method of fabricating a device structure, the method comprising:
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forming a first conductive layer on a dielectric layer; forming a semiconductor layer on the first conductive layer, the semiconductor layer comprised of a silicon-containing semiconductor material in an amorphous state or a polycrystalline state; forming an insulator layer on the semiconductor layer; forming a second conductive layer on the insulator layer; patterning the second conductive layer, the insulator layer, and the semiconductor layer, to respectively form a first electrode, an electrode insulator, and a semiconductor body, the electrical insulator separating the first electrode from the semiconductor body; after the first electrode, the semiconductor body, and the electrical insulator are formed, patterning the first conductive layer to form a second electrode; and forming a source region and a drain region in the semiconductor body. - View Dependent Claims (2, 3, 9)
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4. A method of fabricating a device structure, the method comprising:
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forming a first conductive layer on a dielectric layer; forming a semiconductor layer on the first conductive layer, the semiconductor layer comprised of a silicon-containing semiconductor material in an amorphous state or a polycrystalline state; forming an insulator layer on the semiconductor layer; and forming a second conductive layer on the insulator layer; applying a first mask partially covering the second conductive layer; after the first mask is applied, etching the second conductive layer selective to the semiconductor layer to form a first electrode; applying a second mask partially covering the semiconductor layer and the insulator layer and covering the first electrode; after the second mask is applied, etching the semiconductor layer and the insulator layer selective to the first conductive layer to respectively form a semiconductor body and an electrode insulator separating the first electrode from the semiconductor body; applying a third mask partially covering the first conductive layer and covering the first electrode, the dielectric layer, and the semiconductor body; after the third mask is applied, etching the first conductive layer selective to the dielectric layer to form a wire forming a second electrode of the device structure; and forming a source region and a drain region in the semiconductor body. - View Dependent Claims (5, 6, 7, 8)
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Specification