Normally-off III-nitride metal-2DEG tunnel junction field-effect transistors

  • US 8,809,987 B2
  • Filed: 09/08/2010
  • Issued: 08/19/2014
  • Est. Priority Date: 07/06/2010
  • Status: Active Grant
First Claim
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1. A tunnel junction field-effect transistor (TJ-FET) having a source, a gate, and a drain, the TJ-FET comprising:

  • a substrate comprising a buffer layer deposited on the substrate and a barrier layer deposited on the buffer layer, the buffer layer and the barrier layer forming a heterojunction of the TJ-FET at an interface of the buffer layer and the barrier layer; and

    a metal region at the source, adjacent to the buffer layer, and spanning across the interface, wherein the metal region forms a gate-controlled Schottky tunnel junction with the heterojunction.

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