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Photomask inspection method, semiconductor device inspection method, and pattern inspection apparatus

  • US 8,811,713 B2
  • Filed: 07/31/2009
  • Issued: 08/19/2014
  • Est. Priority Date: 09/04/2008
  • Status: Expired due to Fees
First Claim
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1. A pattern inspection apparatus for inspecting a plurality of photomasks each used to manufacture a same semiconductor device, the photomasks each including a plurality of mutually replaceable unit regions set therein, the apparatus comprising:

  • a redundancy map storage unit storing a redundancy map indicating a disposition of the unit regions;

    an image capture unit for acquiring optical images of the photomasks;

    a defect determination unit which;

    compares an acquired optical image of a first one of the photomasks to a reference image associated with the first one of the photomasks to detect a defect,determines whether a detected defect is a redundancy defect positioned in a first one of the unit regions replaceable with a second one of the unit regions to render usable the first one of the photomasks,updates the redundancy map to record a coordinate of the redundancy defect, andoutputs information regarding the detected defect; and

    a control unit which;

    identifies, for a second one of the photomasks, one of the unit regions on the second one of the photomasks that includes the coordinate of the detected redundancy defect as a redundancy-relevant region on the second one of the photomasks, andinstructs the image capture unit not to inspect the redundancy-relevant region.

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