Bit cell with double patterned metal layer structures

  • US 8,823,178 B2
  • Filed: 09/14/2012
  • Issued: 09/02/2014
  • Est. Priority Date: 09/14/2012
  • Status: Active Grant
First Claim
Patent Images

1. A method comprising:

  • providing at least one word line structure, at least one ground line structure, and at least one power line structure;

    providing at least one bit line structure proximate the at least one word line structure, the at least one ground line structure, and the at least one power line structure; and

    the at least one word line structure, the at least one ground line structure, the at least one power line structure, and the at least one bit line structure together providing at least one double patterned metal layer structure,connecting the at least one double patterned metal layer structure to active region contacts and gate contacts,wherein the at least one word line structure comprises a first tip edge and a first side edge, and the at least one ground line structure comprises a second tip edge and a second side edge, with the first tip edge perpendicular to the first side edge and the second tip edge perpendicular to the second side edge, and the first side edge facing the second side edge; and

    providing each of the at least one bit line structures with a third tip edge and a third side edge,wherein the first and second tip edges are parallel to the third side edge.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×