Strained gate electrodes in semiconductor devices

• US 8,835,291 B2
• Filed: 03/13/2009
• Issued: 09/16/2014
• Est. Priority Date: 11/14/2005
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Huang, Chien-Chao, Yang, Fu-Liang
• Primary Examiner(s): Malsawma, Lex
• Assistant Examiner(s): ZHU, SHENG-BAI
• Application Number:
  US12/404,050
• Publication Number:
  US 20090203202A1
• Time in Patent Office: 2,013 Days
• Field of Search: 257/414, 257/192, 257/368, 257/E29.003, 438/231, 438/530, 438/166
• US Class Current: 438/585
• CPC Class Codes: H01L 21/823807 with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
• CPC Class Codes: H01L 21/823842 gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures

Abstract

Embodiments of the invention provide a semiconductor device and a method of manufacture. MOS devices along with their polycrystalline or amorphous gate electrodes are fabricated such that the intrinsic stress within the gate electrode creates a stress in the channel region between the MOS source/drain regions. Embodiments include forming an NMOS device and a PMOS device after having converted a portion of the intermediate NMOS gate electrode layer to an amorphous layer and then recrystallizing it before patterning to form the electrode. The average grain size in the NMOS recrystallized gate electrode is smaller than that in the PMOS recrystallized gate electrode. In another embodiment, the NMOS device comprises an amorphous gate electrode.

Claims

1. A method of forming an integrated circuit, the method comprising:

providing a substrate;

forming a gate dielectric layer over the substrate;

forming a gate electrode layer over the gate dielectric layer, the gate electrode layer being crystalline or polycrystalline;

amorphizing, after the forming the gate electrode layer, only an upper portion of the gate electrode layer, thereby creating an amorphized gate electrode layer, a lower portion of the gate electrode layer remaining crystalline or polycrystalline, the lower portion of the gate electrode having a first grain structure, the lower portion of the gate electrode layer being interposed between the upper portion of the gate electrode layer and the substrate;

recrystallizing the upper portion of the gate electrode layer such that the upper portion has a second grain structure after the recrystallizing, the second grain structure being a different grain structure than the first grain structure of the lower portion; and

after the amorphizing, patterning the gate electrode layer to form a gate electrode.

2. The method of claim 1, wherein the amorphizing is performed at least in part by an implantation.

3. The method of claim 1, further comprising forming a cap layer over the amorphized gate electrode layer.

4. The method of claim 1, wherein the recrystallizing the amorphized gate electrode layer is performed at least in part by annealing.

5. The method of claim 1, further comprising forming a glue layer interposed between the gate dielectric layer and the gate electrode layer.

6. The method of claim 1, further comprising forming a stress layer interposed between the gate dielectric layer and the gate electrode layer.

7. The method of claim 3, wherein the cap layer is a nitrogen-containing cap layer.

8. The method of claim 3, wherein the cap layer has an intrinsic stress.

9. A method of forming an integrated circuit, the method comprising:

providing a substrate;

forming a gate dielectric layer over the substrate;

forming a gate electrode layer over the gate dielectric layer, the gate electrode layer being crystalline or polycrystalline;

amorphizing, after the forming the gate electrode layer, at least a portion of the gate electrode layer, thereby creating an amorphized gate electrode layer;

stabilizing an amorphous phase of an upper surface of the gate electrode layer, the stabilizing being performed at least in part by forming a cap layer over the gate electrode layer;

crystallizing at least a portion of the amorphized gate electrode layer, the crystallizing being performed while the cap layer is over the gate electrode layer; and

implanting ions to form source/drain regions, the implanting being a separate process from the amorphizing.

10. The method of claim 9, wherein a thickness of the gate electrode layer is completely amorphized during the amorphizing.

11. The method of claim 9, wherein the amorphizing is performed at least in part by an implantation.

12. The method of claim 9, wherein the crystallizing is performed at least in part by annealing.

13. A method of forming an integrated circuit, the method comprising:

providing a substrate;

forming a gate dielectric layer over the substrate;

forming a gate electrode layer over the gate dielectric layer;

forming a mask layer over at least a portion of the gate electrode layer;

amorphizing, after the forming the mask layer, at least a portion of the gate electrode layer, thereby creating an amorphized gate electrode layer, the mask layer reducing the amorphizing of the gate electrode layer underlying the mask layer;

forming a cap layer over the gate electrode layer;

crystallizing at least a portion of the amorphized gate electrode layer; and

implanting ions to form source/drain regions, the implanting being a separate process from the amorphizing.

14. A method of forming an integrated circuit, the method comprising:

providing a substrate, the substrate having a first section and a second section;

forming a dielectric layer over the substrate in the first section and the second section;

forming a first layer over the dielectric layer in the first section and the second section;

forming a mask layer over the first layer in the first section;

amorphizing at least a portion of the first layer in the second section, the amorphizing converting the portion of the first layer from a crystalline or polycrystalline region to an amorphous region;

removing the mask layer;

forming a nitrogen-containing cap layer over the first layer in the first section and the second section, the nitrogen-containing cap layer stabilizing a solid phase structure of the first layer;

at least partially crystallizing the amorphized region of the first layer, the at least partially crystallizing the amorphized region being performed while the nitrogen-containing cap layer is over the first layer; and

forming, after the at least partially crystallizing, lightly doped source/drain regions.

15. The method of claim 14, further comprising forming a first transistor in the first section and a second transistor in the second section, wherein the dielectric layer and the first layer are used to form a gate dielectric and a gate electrode for each of the first transistor and the second transistor.

16. The method of claim 15, wherein the first transistor is a PMOS transistor and the second transistor is an NMOS transistor.

17. The method of claim 14, wherein the amorphizing creates an amorphized layer and an un-amorphized layer, the amorphized layer and the un-amorphized layer being portions of the first layer in the second section, the un-amorphized layer being thicker than the amorphized layer.

18. The method of claim 17, wherein the amorphized layer is about 0.2 to about 0.5 times a thickness of the un-amorphized layer.

19. The method of claim 14, further comprising forming a glue layer interposed between the dielectric layer and the first layer.

20. The method of claim 14, further comprising forming a stress layer interposed between the dielectric layer and the first layer.