Ion-sensing charge-accumulation circuits and methods

• US 8,858,782 B2
• Filed: 06/30/2011
• Issued: 10/14/2014
• Est. Priority Date: 06/30/2010
• Status: Active Grant

• Current Assignee: Life Technologies Corporation (Thermo Fisher Scientific Incorporated)
• Original Assignee: Life Technologies Corporation (Thermo Fisher Scientific Incorporated)
• Inventors: Fife, Keith
• Primary Examiner(s): DINH, BACH T
• Application Number:
  US13/173,146
• Publication Number:
  US 20120000274A1
• Time in Patent Office: 1,202 Days
• Field of Search: 257/253, 205/793.5, 205/782
• US Class Current: 205/793.5
• CPC Class Codes: G01N 27/302 pH sensitive, e.g. quinhydron, antimony or hydrogen electrodes ion selective electrodes G01N27/333, glass electrodes G01N27/36
• CPC Class Codes: G01N 27/414 Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
• CPC Class Codes: G01N 27/4145 specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
• CPC Class Codes: G01N 27/4148 Integrated circuits therefor, e.g. fabricated by CMOS processing CMOS processing per se H01L21/82

Abstract

An ion-sensitive circuit can include a charge accumulation device, to accumulate a plurality of charge packets as a function of an ion concentration of a fluid, and at least one control and readout transistor, to generate an output signal as a function of the accumulated plurality of charge packets, the output signal representing the ion concentration of the solution. The charge accumulation device can include a first charge control electrode above a first electrode semiconductor region, an electrically floating gate structure above a gate semiconductor region and below an ion-sensitive passivation surface, a second charge control electrode above a second electrode semiconductor region, and a drain diffusion region. The first control electrode can control entry of charge into a gate semiconductor region in response to a first control signal. The ion-sensitive passivation surface can be configured to receive the fluid. The second charge control electrode can control transmission of the plurality of charge packets out of the gate semiconductor region and into the drain diffusion region in response to a second control signal. The drain diffusion region can receive the plurality of charge packets from the gate semiconductor region via the second electrode semiconductor region.

Claims

1. An ion-sensitive circuit, comprising:

a charge-accumulation device to accumulate a plurality of charge packets as a function of an ion concentration of a fluid, including;

a substrate having formed thereon a gate oxide layer;

a first charge control electrode, formed over a first electrode semiconductor region and disposed on the gate oxide layer, to control entry of charge from the ion concentration of the fluid into a gate semiconductor region in response to a first control signal applied to the first electrode;

an electrically floating gate structure disposed between a gate semiconductor region and an ion-sensitive passivation surface configured to receive the fluid, the floating gate includes a plurality of conductors electrically coupled to one another and separated by dielectric layers; and

a second charge control electrode, formed over a second electrode semiconductor region and disposed on the gate oxide layer, to control transmission of the plurality of charge packets out of the gate semiconductor region and into a drain diffusion region in response to a second control signal applied to the second electrode; and

a drain diffusion region to receive the plurality of charge packets from the gate semiconductor region via the second electrode semiconductor region,

at least one control and readout transistor to generate an output voltage as a function of the accumulated plurality of charge packets at the drain diffusion region of the charge accumulation device, wherein the output voltage is representative of the ion concentration of the solution.

2. The ion-sensitive circuit of claim 1, further comprising a control circuit configured to generate and provide an injection control signal to inject charge into the gate semiconductor region through the first electrode semiconductor region.

3. The ion-sensitive circuit of claim 2, further comprising a source diffusion region adjacent to the first electrode semiconductor region, wherein the injection control signal includes a source control signal provided to the source diffusion region to inject the charge into the gate and first electrode semiconductor regions through the source diffusion region.

4. The ion-sensitive circuit of claim 1, further comprising a control circuit to generate and provide the second control signal to the second control electrode to individually transfer each of the plurality of charge packets from the gate semiconductor region one at a time, through the second electrode semiconductor region, to the drain diffusion region.

5. The ion-sensitive circuit of claim 1, further comprising a control circuit to generate a provide a readout control signal to the at least one readout transistor to generate the output signal after the plurality of the charge packets have been individually transferred one at a time from the gate semiconductor region to the drain diffusion region.

6. The ion-sensitive circuit of claim 1, wherein the charge accumulation device and the at least one readout transistor form a pixel circuit, and the ion-sensitive circuit further comprises a plurality of the pixel circuit arranged into an ion-sensitive pixel array.

7. The ion-sensitive circuit of claim 6, wherein the pixel array includes a plurality of rows and a plurality of columns of the pixel circuits, each row includes one or more row control and data lines, and each column includes one or more column control and data lines.

8. The ion-sensitive circuit of claim 1, further comprising a control circuit configured to control the charge accumulation device to individually transfer each of the plurality of charge packets from the gate semiconductor region, through the second electrode semiconductor region and to the drain diffusion region, at a selectable charge packet accumulation frequency.

9. The ion-sensitive circuit of claim 1, further comprising a control circuit configured to control the charge accumulation device and at least one readout transistor to generate the output signal as a function of the plurality of charge packets accumulated at the drain diffusion region at a selectable output generation frequency.

10. The ion-sensitive circuit of claim 1, wherein the at least one control and readout transistor includes:

a reset transistor connected to the drain diffusion region of the charge accumulation device, to a row control line and to a column control line; and

first and second readout transistors connected to the drain diffusion region of the charge accumulation device, to the column control line and to a column data line, wherein the first readout transistor is connected in a source follower configuration and the second readout transistor is connected in a cascode configuration.

11. The ion-sensitive circuit of claim 1, wherein the at least one control and readout transistor includes:

a reset transistor connected to the drain diffusion region of the charge accumulation device, to a row control line and to a column control line; and

a readout transistor connected to the drain diffusion region of the charge accumulation device, to a source diffusion region of the charge accumulation device, to the column control line and to a column data line.

12. The ion-sensitive circuit of claim 1, wherein the at least one control and readout transistor includes:

a reset transistor connected to the drain diffusion region of the charge accumulation device, to a row control line and to a column control line; and

a readout transistor connected to the drain diffusion region of the charge accumulation device, to the column control line and to a column data line.

13. The ion-sensitive circuit of claim 1, wherein the charge accumulation device includes a source diffusion region adjacent to the first electrode semiconductor region, the first electrode semiconductor region is adjacent to the gate semiconductor region, the gate electrode semiconductor region is adjacent to the second electrode semiconductor region, and the second electrode semiconductor region is adjacent to the drain diffusion region.

14. The ion-sensitive circuit of claim 1, wherein the charge accumulation device includes a third charge control electrode, above a third electrode semiconductor region, to control the accumulation of the plurality of charge packets in the third electrode semiconductor region before the plurality of charge packets are transferred to the drain diffusion region.